Abstract
The invention discloses a non-contact silicon carbide power device junction temperature online detection system and detection method. The silicon carbide power device is controlled by the temperaturecontrol unit to work according to a set working temperature, and the silicon carbide power device is controlled by the driving unit to work, so that current flows through a parasitic diode of the silicon carbide power device to generate an electroluminescent phenomenon; detection is conducted to obtain the working temperature, the conduction current and the luminous intensity of the silicon carbide power device, and a function model is established; and the to-be-detected condition is detected and calculated according to the function model to obtain the working junction temperature of the silicon carbide power device. The junction temperature is deduced by detecting the luminous intensity of the impurity or defect energy level of the silicon carbide power device, non-contact measurement isachieved, the characteristic of inherent electrical isolation is achieved, and the method is particularly suitable for online junction temperature detection of the silicon carbide power device workingin high-temperature, high-voltage and high-current application occasions and has high precision and real-time performance.
| Original language | English |
|---|---|
| Patent number | CN112180227A |
| IPC | G01R 31/ 26 A I |
| Priority date | 25/09/20 |
| Publication status | Published - 5 Jan 2021 |
| Externally published | Yes |
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