Noise properties of the spin-valve transistor

O.M.J. Erve, van 't; P.S. Anil Kumar; R. Jansen; S.D. Kim; R. Vlutters; J.C. Lodder; A.A. Smits; W.J.M. Jonge, de

doi:10.1016/S0924-4247(01)00616-1

Noise properties of the spin-valve transistor

O.M.J. Erve, van 't
, P.S. Anil Kumar
, R. Jansen
, S.D. Kim
, R. Vlutters
, J.C. Lodder
, A.A. Smits
, W.J.M. Jonge, de

Physics of Nanostructures

Research output: Contribution to journal › Article › Academic › peer-review

5 Citations (Scopus)

Abstract

Noise measurements have been performed on a spin-valve transistor. This transistor consists of a Pt/NiFe/Au/Co/Au multilayer sandwiched between two semiconductors. For comparison, we also studied metal base transistors with a Pt/Au or Pt/NiFe/Au base. All samples show full shot noise in the collector current. The inclusion of a spin-valve in the base layer decreases the absolute value of the collector current and with it the noise level but it does not change the nature of the noise in this device. Similarly, the collector current, and therefore, the noise changes as a function of magnetic field for the spin-valve transistor, but no additional noise of magnetic origin is observed

Original language	English
Pages (from-to)	192-195
Journal	Sensors and Actuators, A: Physical
Volume	A91
Issue number	1-2
DOIs	https://doi.org/10.1016/S0924-4247(01)00616-1
Publication status	Published - 2001

Access to Document

10.1016/S0924-4247(01)00616-1

Cite this

@article{f97c438e26944c3ab8f31c10a4877dac,

title = "Noise properties of the spin-valve transistor",

abstract = "Noise measurements have been performed on a spin-valve transistor. This transistor consists of a Pt/NiFe/Au/Co/Au multilayer sandwiched between two semiconductors. For comparison, we also studied metal base transistors with a Pt/Au or Pt/NiFe/Au base. All samples show full shot noise in the collector current. The inclusion of a spin-valve in the base layer decreases the absolute value of the collector current and with it the noise level but it does not change the nature of the noise in this device. Similarly, the collector current, and therefore, the noise changes as a function of magnetic field for the spin-valve transistor, but no additional noise of magnetic origin is observed",

author = "\{Erve, van 't\}, O.M.J. and \{Anil Kumar\}, P.S. and R. Jansen and S.D. Kim and R. Vlutters and J.C. Lodder and A.A. Smits and \{Jonge, de\}, W.J.M.",

year = "2001",

doi = "10.1016/S0924-4247(01)00616-1",

language = "English",

volume = "A91",

pages = "192--195",

journal = "Sensors and Actuators, A: Physical",

issn = "0924-4247",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Noise properties of the spin-valve transistor

AU - Erve, van 't, O.M.J.

AU - Anil Kumar, P.S.

AU - Jansen, R.

AU - Kim, S.D.

AU - Vlutters, R.

AU - Lodder, J.C.

AU - Smits, A.A.

AU - Jonge, de, W.J.M.

PY - 2001

Y1 - 2001

N2 - Noise measurements have been performed on a spin-valve transistor. This transistor consists of a Pt/NiFe/Au/Co/Au multilayer sandwiched between two semiconductors. For comparison, we also studied metal base transistors with a Pt/Au or Pt/NiFe/Au base. All samples show full shot noise in the collector current. The inclusion of a spin-valve in the base layer decreases the absolute value of the collector current and with it the noise level but it does not change the nature of the noise in this device. Similarly, the collector current, and therefore, the noise changes as a function of magnetic field for the spin-valve transistor, but no additional noise of magnetic origin is observed

AB - Noise measurements have been performed on a spin-valve transistor. This transistor consists of a Pt/NiFe/Au/Co/Au multilayer sandwiched between two semiconductors. For comparison, we also studied metal base transistors with a Pt/Au or Pt/NiFe/Au base. All samples show full shot noise in the collector current. The inclusion of a spin-valve in the base layer decreases the absolute value of the collector current and with it the noise level but it does not change the nature of the noise in this device. Similarly, the collector current, and therefore, the noise changes as a function of magnetic field for the spin-valve transistor, but no additional noise of magnetic origin is observed

U2 - 10.1016/S0924-4247(01)00616-1

DO - 10.1016/S0924-4247(01)00616-1

M3 - Article

SN - 0924-4247

VL - A91

SP - 192

EP - 195

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

IS - 1-2

ER -

Noise properties of the spin-valve transistor

Abstract

Access to Document

Fingerprint

Cite this