Noise properties of the spin-valve transistor

O.M.J. Erve, van 't, P.S. Anil Kumar, R. Jansen, S.D. Kim, R. Vlutters, J.C. Lodder, A.A. Smits, W.J.M. Jonge, de

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Abstract

Noise measurements have been performed on a spin-valve transistor. This transistor consists of a Pt/NiFe/Au/Co/Au multilayer sandwiched between two semiconductors. For comparison, we also studied metal base transistors with a Pt/Au or Pt/NiFe/Au base. All samples show full shot noise in the collector current. The inclusion of a spin-valve in the base layer decreases the absolute value of the collector current and with it the noise level but it does not change the nature of the noise in this device. Similarly, the collector current, and therefore, the noise changes as a function of magnetic field for the spin-valve transistor, but no additional noise of magnetic origin is observed
Original languageEnglish
Pages (from-to)192-195
JournalSensors and Actuators, A: Physical
VolumeA91
Issue number1-2
DOIs
Publication statusPublished - 2001

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    Erve, van 't, O. M. J., Anil Kumar, P. S., Jansen, R., Kim, S. D., Vlutters, R., Lodder, J. C., ... Jonge, de, W. J. M. (2001). Noise properties of the spin-valve transistor. Sensors and Actuators, A: Physical, A91(1-2), 192-195. https://doi.org/10.1016/S0924-4247(01)00616-1