TY - JOUR
T1 - Noise properties of the spin-valve transistor
AU - Erve, van 't, O.M.J.
AU - Anil Kumar, P.S.
AU - Jansen, R.
AU - Kim, S.D.
AU - Vlutters, R.
AU - Lodder, J.C.
AU - Smits, A.A.
AU - Jonge, de, W.J.M.
PY - 2001
Y1 - 2001
N2 - Noise measurements have been performed on a spin-valve transistor. This transistor consists of a Pt/NiFe/Au/Co/Au multilayer sandwiched between two semiconductors. For comparison, we also studied metal base transistors with a Pt/Au or Pt/NiFe/Au base. All samples show full shot noise in the collector current. The inclusion of a spin-valve in the base layer decreases the absolute value of the collector current and with it the noise level but it does not change the nature of the noise in this device. Similarly, the collector current, and therefore, the noise changes as a function of magnetic field for the spin-valve transistor, but no additional noise of magnetic origin is observed
AB - Noise measurements have been performed on a spin-valve transistor. This transistor consists of a Pt/NiFe/Au/Co/Au multilayer sandwiched between two semiconductors. For comparison, we also studied metal base transistors with a Pt/Au or Pt/NiFe/Au base. All samples show full shot noise in the collector current. The inclusion of a spin-valve in the base layer decreases the absolute value of the collector current and with it the noise level but it does not change the nature of the noise in this device. Similarly, the collector current, and therefore, the noise changes as a function of magnetic field for the spin-valve transistor, but no additional noise of magnetic origin is observed
U2 - 10.1016/S0924-4247(01)00616-1
DO - 10.1016/S0924-4247(01)00616-1
M3 - Article
SN - 0924-4247
VL - A91
SP - 192
EP - 195
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
IS - 1-2
ER -