Abstract
We characterize granular NbNx thin cermet films deposited on either sapphire substrate or on SiO2 and compare the 1/f noise at 300 K and 80 K. The films were characterized with an impedance analyzer from 20 Hz to 1 MHz and analyzed as a resistor R in parallel with a capacitor C. The calculated noise voltage spectral density SvTh of the sample is in agreement with the experimentally observed noise for unbiased samples.
The noise measurements on biased samples show 1/f noise. We checked that contact noise does not contribute to our measurements. The 1/f noise was compared for the films deposited on the silicon substrate and on the sapphire.
Finally a model is proposed to explain the observed trends in the temperature resistance coefficient (TRC <0 for all samples) and the relative 1/f noise at 300 K and 80 K with the composition x = N/Nb of the layers.
| Original language | English |
|---|---|
| Pages (from-to) | L19-L30 |
| Journal | Fluctuation and Noise Letters |
| Volume | 7 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2007 |
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