Noise-margin analysis for organic thin-film complementary technology

Dieter Bode, Cédric Rolin, Sarah Schols, Maarten Debucquoy, Soeren Steudel, Gerwin H. Gelinck, Jan Genoe, Paul Heremans

Research output: Contribution to journalArticleAcademicpeer-review

50 Citations (Scopus)

Abstract

Parameter variation in organic thin-film transistor (OTFT) technology is known to limit the yield of digital circuits. It is expected that complementary OTFT technology (C-TFT) will reduce the sensitivity to parameter variations. In this paper, we quantify the dependence of yield on transistor parameter variations for C-TFT and compare it to unipolar logic. First, a basic inverter model is developed and fitted to measured transfer characteristics of organic complementary inverters. Next, the inverter model is used in numerical simulations to determine how the noise margin of the inverter, a measure for its reliable operation, changes as a function of transistor parameter variations. The noise margin is significantly improved with respect to p-type-only inverters with similar parameters. Finally, we perform circuit-level yield predictions as a function of parameter spread using the noise-margin simulations performed earlier.

Original languageEnglish
Article number5340654
Pages (from-to)201-208
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume57
Issue number1
DOIs
Publication statusPublished - 1 Jan 2010
Externally publishedYes

Keywords

  • Complementary circuits
  • N-type organic thin-film transistor (n-type OTFT)
  • Yield estimation

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