Noise due to localized states in the quantum Hall regime

A. J. Kil; R. J.J. Zijlstra; P. M. Koenraad; J. A. Pals; J. P. André

doi:10.1016/0038-1098(86)90606-X

Noise due to localized states in the quantum Hall regime

A. J. Kil
, R. J.J. Zijlstra
, P. M. Koenraad
, J. A. Pals
, J. P. André

Research output: Contribution to journal › Article › Academic › peer-review

17 Citations (Scopus)

Abstract

We have measured the spectral noise intensities of Hall and Shubnikov-de Haas voltages as well as of the voltage across a GaAs/AlGaAs heterostructure. The frequency dependent part of the observed noise is associated with carrier density fluctuations. The results provide strong experimental evidence for the occurrence of localization-delocalization fluctuations associated with the existence of localized states in the tails of the Landau levels. The frequency independent part of the noise is thermal noise.

Original language	English
Pages (from-to)	831-834
Number of pages	4
Journal	Solid State Communications
Volume	60
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(86)90606-X
Publication status	Published - 1 Jan 1986
Externally published	Yes

Funding

Acknowledgements - We would like to thank T.C. de Ruiter for his experimental help. This work was performed as a part of the research program of the Stichting Fundamenteel Onderzoek der Materie (FOM) and with financial support from the Nederlandse Organisatie voor Zuiver Wetenschappelijk Onderzoek (ZWO).

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10.1016/0038-1098(86)90606-X

Cite this

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title = "Noise due to localized states in the quantum Hall regime",

abstract = "We have measured the spectral noise intensities of Hall and Shubnikov-de Haas voltages as well as of the voltage across a GaAs/AlGaAs heterostructure. The frequency dependent part of the observed noise is associated with carrier density fluctuations. The results provide strong experimental evidence for the occurrence of localization-delocalization fluctuations associated with the existence of localized states in the tails of the Landau levels. The frequency independent part of the noise is thermal noise.",

author = "Kil, \{A. J.\} and Zijlstra, \{R. J.J.\} and Koenraad, \{P. M.\} and Pals, \{J. A.\} and Andr{\'e}, \{J. P.\}",

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T1 - Noise due to localized states in the quantum Hall regime

AU - Kil, A. J.

AU - Zijlstra, R. J.J.

AU - Koenraad, P. M.

AU - Pals, J. A.

AU - André, J. P.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - We have measured the spectral noise intensities of Hall and Shubnikov-de Haas voltages as well as of the voltage across a GaAs/AlGaAs heterostructure. The frequency dependent part of the observed noise is associated with carrier density fluctuations. The results provide strong experimental evidence for the occurrence of localization-delocalization fluctuations associated with the existence of localized states in the tails of the Landau levels. The frequency independent part of the noise is thermal noise.

AB - We have measured the spectral noise intensities of Hall and Shubnikov-de Haas voltages as well as of the voltage across a GaAs/AlGaAs heterostructure. The frequency dependent part of the observed noise is associated with carrier density fluctuations. The results provide strong experimental evidence for the occurrence of localization-delocalization fluctuations associated with the existence of localized states in the tails of the Landau levels. The frequency independent part of the noise is thermal noise.

UR - https://www.scopus.com/pages/publications/0346707270

U2 - 10.1016/0038-1098(86)90606-X

DO - 10.1016/0038-1098(86)90606-X

M3 - Article

AN - SCOPUS:0346707270

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VL - 60

SP - 831

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JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Noise due to localized states in the quantum Hall regime

Abstract

Funding

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