Abstract
We have measured the spectral noise intensities of Hall and Shubnikov-de Haas voltages as well as of the voltage across a GaAs/AlGaAs heterostructure. The frequency dependent part of the observed noise is associated with carrier density fluctuations. The results provide strong experimental evidence for the occurrence of localization-delocalization fluctuations associated with the existence of localized states in the tails of the Landau levels. The frequency independent part of the noise is thermal noise.
Original language | English |
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Pages (from-to) | 831-834 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 60 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1 Jan 1986 |
Externally published | Yes |
Funding
Acknowledgements - We would like to thank T.C. de Ruiter for his experimental help. This work was performed as a part of the research program of the Stichting Fundamenteel Onderzoek der Materie (FOM) and with financial support from the Nederlandse Organisatie voor Zuiver Wetenschappelijk Onderzoek (ZWO).