Noise due to localized states in the quantum Hall regime

A. J. Kil, R. J.J. Zijlstra, P. M. Koenraad, J. A. Pals, J. P. André

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Abstract

We have measured the spectral noise intensities of Hall and Shubnikov-de Haas voltages as well as of the voltage across a GaAs/AlGaAs heterostructure. The frequency dependent part of the observed noise is associated with carrier density fluctuations. The results provide strong experimental evidence for the occurrence of localization-delocalization fluctuations associated with the existence of localized states in the tails of the Landau levels. The frequency independent part of the noise is thermal noise.

Original languageEnglish
Pages (from-to)831-834
Number of pages4
JournalSolid State Communications
Volume60
Issue number10
DOIs
Publication statusPublished - 1 Jan 1986
Externally publishedYes

Funding

Acknowledgements - We would like to thank T.C. de Ruiter for his experimental help. This work was performed as a part of the research program of the Stichting Fundamenteel Onderzoek der Materie (FOM) and with financial support from the Nederlandse Organisatie voor Zuiver Wetenschappelijk Onderzoek (ZWO).

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