Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar/N2 plasma

I. Volintiru, M. Creatore, W.H. van Helvoort, J.L. Linden, M.C.M. Sanden, van de

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Abstract

Nitrogen-contg. zinc oxide films were deposited by the metal org. CVD technique from oxygen/diethylzinc mixts. injected in an argon/nitrogen expanding thermal plasma. IR spectroscopy and mass spectrometry measurements suggest that nitrogen is incorporated mostly as -C.tplbond.N and segregated at grain boundaries. The correlation between the presence of nitrile bonds and the formation of HCN in the plasma phase points towards an inherent limitation during such deposition process, i.e., when using carbon-rich precursors in a highly reactive nitrogen environment, such as an Ar/N2 expanding thermal plasma. [on SciFinder (R)]
Original languageEnglish
Article number022110
Pages (from-to)022110-1/3
JournalApplied Physics Letters
Volume89
Issue number2
DOIs
Publication statusPublished - 2006

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