Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar/N2 plasma

I. Volintiru; M. Creatore; W.H. van Helvoort; J.L. Linden; M.C.M. Sanden, van de

doi:10.1063/1.2221391

Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar/N2 plasma

I. Volintiru, M. Creatore, W.H. van Helvoort, J.L. Linden, M.C.M. Sanden, van de

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Abstract

Nitrogen-contg. zinc oxide films were deposited by the metal org. CVD technique from oxygen/diethylzinc mixts. injected in an argon/nitrogen expanding thermal plasma. IR spectroscopy and mass spectrometry measurements suggest that nitrogen is incorporated mostly as -C.tplbond.N and segregated at grain boundaries. The correlation between the presence of nitrile bonds and the formation of HCN in the plasma phase points towards an inherent limitation during such deposition process, i.e., when using carbon-rich precursors in a highly reactive nitrogen environment, such as an Ar/N2 expanding thermal plasma. [on SciFinder (R)]

Original language	English
Article number	022110
Pages (from-to)	022110-1/3
Journal	Applied Physics Letters
Volume	89
Issue number	2
DOIs	https://doi.org/10.1063/1.2221391
Publication status	Published - 2006

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title = "Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar/N2 plasma",

abstract = "Nitrogen-contg. zinc oxide films were deposited by the metal org. CVD technique from oxygen/diethylzinc mixts. injected in an argon/nitrogen expanding thermal plasma. IR spectroscopy and mass spectrometry measurements suggest that nitrogen is incorporated mostly as -C.tplbond.N and segregated at grain boundaries. The correlation between the presence of nitrile bonds and the formation of HCN in the plasma phase points towards an inherent limitation during such deposition process, i.e., when using carbon-rich precursors in a highly reactive nitrogen environment, such as an Ar/N2 expanding thermal plasma. [on SciFinder (R)]",

author = "I. Volintiru and M. Creatore and {van Helvoort}, W.H. and J.L. Linden and {Sanden, van de}, M.C.M.",

year = "2006",

doi = "10.1063/1.2221391",

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T1 - Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar/N2 plasma

AU - Volintiru, I.

AU - Creatore, M.

AU - van Helvoort, W.H.

AU - Linden, J.L.

AU - Sanden, van de, M.C.M.

PY - 2006

Y1 - 2006

N2 - Nitrogen-contg. zinc oxide films were deposited by the metal org. CVD technique from oxygen/diethylzinc mixts. injected in an argon/nitrogen expanding thermal plasma. IR spectroscopy and mass spectrometry measurements suggest that nitrogen is incorporated mostly as -C.tplbond.N and segregated at grain boundaries. The correlation between the presence of nitrile bonds and the formation of HCN in the plasma phase points towards an inherent limitation during such deposition process, i.e., when using carbon-rich precursors in a highly reactive nitrogen environment, such as an Ar/N2 expanding thermal plasma. [on SciFinder (R)]

AB - Nitrogen-contg. zinc oxide films were deposited by the metal org. CVD technique from oxygen/diethylzinc mixts. injected in an argon/nitrogen expanding thermal plasma. IR spectroscopy and mass spectrometry measurements suggest that nitrogen is incorporated mostly as -C.tplbond.N and segregated at grain boundaries. The correlation between the presence of nitrile bonds and the formation of HCN in the plasma phase points towards an inherent limitation during such deposition process, i.e., when using carbon-rich precursors in a highly reactive nitrogen environment, such as an Ar/N2 expanding thermal plasma. [on SciFinder (R)]

U2 - 10.1063/1.2221391

DO - 10.1063/1.2221391

M3 - Article

VL - 89

SP - 022110-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 022110

ER -

Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar/N2 plasma

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