Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar/N2 plasma

I. Volintiru; M. Creatore; W.H. van Helvoort; J.L. Linden; M.C.M. Sanden, van de

doi:10.1063/1.2221391

Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar/N2 plasma

I. Volintiru, M. Creatore, W.H. van Helvoort, J.L. Linden, M.C.M. Sanden, van de

Plasma & Materials Processing

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Abstract

Nitrogen-contg. zinc oxide films were deposited by the metal org. CVD technique from oxygen/diethylzinc mixts. injected in an argon/nitrogen expanding thermal plasma. IR spectroscopy and mass spectrometry measurements suggest that nitrogen is incorporated mostly as -C.tplbond.N and segregated at grain boundaries. The correlation between the presence of nitrile bonds and the formation of HCN in the plasma phase points towards an inherent limitation during such deposition process, i.e., when using carbon-rich precursors in a highly reactive nitrogen environment, such as an Ar/N2 expanding thermal plasma. [on SciFinder (R)]

Original language	English
Article number	022110
Pages (from-to)	022110-1/3
Journal	Applied Physics Letters
Volume	89
Issue number	2
DOIs	https://doi.org/10.1063/1.2221391
Publication status	Published - 2006

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Volintiru, I., Creatore, M., van Helvoort, W. H., Linden, J. L., & Sanden, van de, M. C. M. (2006). Nitrogen incorporation during metal organic chemical vapor deposition of ZnO films using a remote Ar/N2 plasma. Applied Physics Letters, 89(2), 022110-1/3. [022110]. https://doi.org/10.1063/1.2221391

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abstract = "Nitrogen-contg. zinc oxide films were deposited by the metal org. CVD technique from oxygen/diethylzinc mixts. injected in an argon/nitrogen expanding thermal plasma. IR spectroscopy and mass spectrometry measurements suggest that nitrogen is incorporated mostly as -C.tplbond.N and segregated at grain boundaries. The correlation between the presence of nitrile bonds and the formation of HCN in the plasma phase points towards an inherent limitation during such deposition process, i.e., when using carbon-rich precursors in a highly reactive nitrogen environment, such as an Ar/N2 expanding thermal plasma. [on SciFinder (R)]",

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AU - Sanden, van de, M.C.M.

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N2 - Nitrogen-contg. zinc oxide films were deposited by the metal org. CVD technique from oxygen/diethylzinc mixts. injected in an argon/nitrogen expanding thermal plasma. IR spectroscopy and mass spectrometry measurements suggest that nitrogen is incorporated mostly as -C.tplbond.N and segregated at grain boundaries. The correlation between the presence of nitrile bonds and the formation of HCN in the plasma phase points towards an inherent limitation during such deposition process, i.e., when using carbon-rich precursors in a highly reactive nitrogen environment, such as an Ar/N2 expanding thermal plasma. [on SciFinder (R)]

AB - Nitrogen-contg. zinc oxide films were deposited by the metal org. CVD technique from oxygen/diethylzinc mixts. injected in an argon/nitrogen expanding thermal plasma. IR spectroscopy and mass spectrometry measurements suggest that nitrogen is incorporated mostly as -C.tplbond.N and segregated at grain boundaries. The correlation between the presence of nitrile bonds and the formation of HCN in the plasma phase points towards an inherent limitation during such deposition process, i.e., when using carbon-rich precursors in a highly reactive nitrogen environment, such as an Ar/N2 expanding thermal plasma. [on SciFinder (R)]

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