A new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.
|Name||Materials Research Society Symposium Proceedings|
|Conference||Amorphous and Nanocrystalline Silicon Science and Technology - 2004|
|City||San Francisco, CA|
|Period||13/04/04 → 16/04/04|