New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)
47 Downloads (Pure)

Abstract

A new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.
Original languageEnglish
Title of host publicationAmorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco
EditorsG. Ganguly, M. Kondo, E.A. Schiff
Place of PublicationWarrendale, Pa
PublisherMaterials Research Society
Pages257-262
Number of pages6
ISBN (Print)1-55899-758-X
DOIs
Publication statusPublished - 1 Dec 2004
EventAmorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States
Duration: 13 Apr 200416 Apr 2004

Publication series

NameMaterials Research Society Symposium Proceedings
Volume808
ISSN (Print)0272-9172

Conference

ConferenceAmorphous and Nanocrystalline Silicon Science and Technology - 2004
CountryUnited States
CitySan Francisco, CA
Period13/04/0416/04/04

Fingerprint

Ultrahigh vacuum
Film growth
ultrahigh vacuum
Hydrogen
Atoms
Spectroscopic ellipsometry
hydrogen
ellipsometry
atoms
Etching
etching
wire
Wire
Plasmas
Experiments

Cite this

Hoefnagels, J. P. M., Langereis, E., van de Sanden, M. C. M., & Kessels, W. M. M. (2004). New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams. In G. Ganguly, M. Kondo, & E. A. Schiff (Eds.), Amorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco (pp. 257-262). [A9.24] (Materials Research Society Symposium Proceedings; Vol. 808). Warrendale, Pa: Materials Research Society. https://doi.org/10.1557/PROC-808-A9.24
Hoefnagels, J. P.M. ; Langereis, E. ; van de Sanden, M. C.M. ; Kessels, W. M.M. / New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams. Amorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco. editor / G. Ganguly ; M. Kondo ; E.A. Schiff. Warrendale, Pa : Materials Research Society, 2004. pp. 257-262 (Materials Research Society Symposium Proceedings).
@inproceedings{caecd1bb5640465d9e1ae25061d7b076,
title = "New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams",
abstract = "A new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.",
author = "Hoefnagels, {J. P.M.} and E. Langereis and {van de Sanden}, {M. C.M.} and Kessels, {W. M.M.}",
year = "2004",
month = "12",
day = "1",
doi = "10.1557/PROC-808-A9.24",
language = "English",
isbn = "1-55899-758-X",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "257--262",
editor = "G. Ganguly and M. Kondo and E.A. Schiff",
booktitle = "Amorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco",
address = "United States",

}

Hoefnagels, JPM, Langereis, E, van de Sanden, MCM & Kessels, WMM 2004, New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams. in G Ganguly, M Kondo & EA Schiff (eds), Amorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco., A9.24, Materials Research Society Symposium Proceedings, vol. 808, Materials Research Society, Warrendale, Pa, pp. 257-262, Amorphous and Nanocrystalline Silicon Science and Technology - 2004, San Francisco, CA, United States, 13/04/04. https://doi.org/10.1557/PROC-808-A9.24

New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams. / Hoefnagels, J. P.M.; Langereis, E.; van de Sanden, M. C.M.; Kessels, W. M.M.

Amorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco. ed. / G. Ganguly; M. Kondo; E.A. Schiff. Warrendale, Pa : Materials Research Society, 2004. p. 257-262 A9.24 (Materials Research Society Symposium Proceedings; Vol. 808).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

AU - Hoefnagels, J. P.M.

AU - Langereis, E.

AU - van de Sanden, M. C.M.

AU - Kessels, W. M.M.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - A new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.

AB - A new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.

UR - http://www.scopus.com/inward/record.url?scp=12744250288&partnerID=8YFLogxK

U2 - 10.1557/PROC-808-A9.24

DO - 10.1557/PROC-808-A9.24

M3 - Conference contribution

SN - 1-55899-758-X

T3 - Materials Research Society Symposium Proceedings

SP - 257

EP - 262

BT - Amorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco

A2 - Ganguly, G.

A2 - Kondo, M.

A2 - Schiff, E.A.

PB - Materials Research Society

CY - Warrendale, Pa

ER -

Hoefnagels JPM, Langereis E, van de Sanden MCM, Kessels WMM. New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams. In Ganguly G, Kondo M, Schiff EA, editors, Amorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco. Warrendale, Pa: Materials Research Society. 2004. p. 257-262. A9.24. (Materials Research Society Symposium Proceedings). https://doi.org/10.1557/PROC-808-A9.24