@inproceedings{caecd1bb5640465d9e1ae25061d7b076,
title = "New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams",
abstract = "A new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.",
author = "Hoefnagels, {J. P.M.} and E. Langereis and {van de Sanden}, {M. C.M.} and Kessels, {W. M.M.}",
year = "2004",
month = dec,
day = "1",
doi = "10.1557/PROC-808-A9.24",
language = "English",
isbn = "1-55899-758-X",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "257--262",
editor = "G. Ganguly and M. Kondo and E.A. Schiff",
booktitle = "Amorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco",
address = "United States",
note = "Amorphous and Nanocrystalline Silicon Science and Technology - 2004 ; Conference date: 13-04-2004 Through 16-04-2004",
}