New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

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Abstract

A new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.
Original languageEnglish
Title of host publicationAmorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco
EditorsG. Ganguly, M. Kondo, E.A. Schiff
Place of PublicationWarrendale, Pa
PublisherMaterials Research Society
Pages257-262
Number of pages6
ISBN (Print)1-55899-758-X
DOIs
Publication statusPublished - 1 Dec 2004
EventAmorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States
Duration: 13 Apr 200416 Apr 2004

Publication series

NameMaterials Research Society Symposium Proceedings
Volume808
ISSN (Print)0272-9172

Conference

ConferenceAmorphous and Nanocrystalline Silicon Science and Technology - 2004
CountryUnited States
CitySan Francisco, CA
Period13/04/0416/04/04

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