Abstract
| Original language | English |
|---|---|
| Title of host publication | Amorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco |
| Editors | G. Ganguly, M. Kondo, E.A. Schiff |
| Place of Publication | Warrendale, Pa |
| Publisher | Materials Research Society |
| Pages | 257-262 |
| Number of pages | 6 |
| ISBN (Print) | 1-55899-758-X |
| DOIs | |
| Publication status | Published - 1 Dec 2004 |
| Event | Amorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States Duration: 13 Apr 2004 → 16 Apr 2004 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 808 |
| ISSN (Print) | 0272-9172 |
Conference
| Conference | Amorphous and Nanocrystalline Silicon Science and Technology - 2004 |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 13/04/04 → 16/04/04 |
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New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams. / Hoefnagels, J. P.M.; Langereis, E.; van de Sanden, M. C.M.; Kessels, W. M.M.
Amorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco. ed. / G. Ganguly; M. Kondo; E.A. Schiff. Warrendale, Pa : Materials Research Society, 2004. p. 257-262 A9.24 (Materials Research Society Symposium Proceedings; Vol. 808).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams
AU - Hoefnagels, J. P.M.
AU - Langereis, E.
AU - van de Sanden, M. C.M.
AU - Kessels, W. M.M.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - A new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.
AB - A new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.
UR - http://www.scopus.com/inward/record.url?scp=12744250288&partnerID=8YFLogxK
U2 - 10.1557/PROC-808-A9.24
DO - 10.1557/PROC-808-A9.24
M3 - Conference contribution
SN - 1-55899-758-X
T3 - Materials Research Society Symposium Proceedings
SP - 257
EP - 262
BT - Amorphous and nanocrystalline silicon science and technology, 2004, symposium held April 13-16, 2004, San Francisco
A2 - Ganguly, G.
A2 - Kondo, M.
A2 - Schiff, E.A.
PB - Materials Research Society
CY - Warrendale, Pa
ER -