New patterning paradigm? : selective deposition may be the way forward to the far reaches of device scaling after 7nm.

M. Lapedus, W.M.M. Kessels

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Abstract

The Eindhoven University of Technology, for one, is working on another approach—direct-write ALD. This is based on an area-selective ALD by an area-activation technique. This makes use of electron-beam induced deposition (EBID) or ion-beam induced deposition (IBID). "We combine the advantages of electron-beam patterning with the advantages of ALD," said Erwin Kessels, a professor at the Eindhoven University of Technology. "The patterning by the e-beam can take place in a SEM system, but it can also be done in a multi-electron beam system."
Original languageEnglish
Place of PublicationS.l.
PublisherSemiconductor Engineering
Publication statusPublished - 2015

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electron beams
scaling
ion beams
activation
scanning electron microscopy

Cite this

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title = "New patterning paradigm? : selective deposition may be the way forward to the far reaches of device scaling after 7nm.",
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New patterning paradigm? : selective deposition may be the way forward to the far reaches of device scaling after 7nm. Lapedus, M. (Author); Kessels, W.M.M. (Author). 2015. S.l. : Semiconductor Engineering.

Research output: Non-textual formWeb publication/siteProfessional

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N2 - The Eindhoven University of Technology, for one, is working on another approach—direct-write ALD. This is based on an area-selective ALD by an area-activation technique. This makes use of electron-beam induced deposition (EBID) or ion-beam induced deposition (IBID). "We combine the advantages of electron-beam patterning with the advantages of ALD," said Erwin Kessels, a professor at the Eindhoven University of Technology. "The patterning by the e-beam can take place in a SEM system, but it can also be done in a multi-electron beam system."

AB - The Eindhoven University of Technology, for one, is working on another approach—direct-write ALD. This is based on an area-selective ALD by an area-activation technique. This makes use of electron-beam induced deposition (EBID) or ion-beam induced deposition (IBID). "We combine the advantages of electron-beam patterning with the advantages of ALD," said Erwin Kessels, a professor at the Eindhoven University of Technology. "The patterning by the e-beam can take place in a SEM system, but it can also be done in a multi-electron beam system."

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