New hot-carrier degradation mechanisms in 0.25 μm PMOSFETs

R. Woltjer; G. M. Paulzen; H. G. Pomp; H. Lifka; P. H. Woerlee

doi:10.1109/VLSIT.1994.324417

New hot-carrier degradation mechanisms in 0.25 μm PMOSFETs

R. Woltjer, G. M. Paulzen, H. G. Pomp, H. Lifka, P. H. Woerlee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

PMOSFET hot-carrier reliability is often proposed to be limited by negative oxide charge. We show that interface states determine the lifetime in deep submicron PMOSFETs. Clear evidence for additional positive oxide-charge generation is presented for the first time. The bias-length- and time dependences are measured for all three degradation mechanisms. Combining these three mechanism describes the time dependence of PMOSFET degradation convincingly for many geometries at many bias conditions.

Original language	English
Title of host publication	1994 VLSI Technology Symposium
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	141-142
Number of pages	2
ISBN (Print)	0-7803-1921-4
DOIs	https://doi.org/10.1109/VLSIT.1994.324417
Publication status	Published - 1 Dec 1994
Externally published	Yes
Event	1994 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 7 Jun 1994 → 9 Jun 1994

Conference

Conference	1994 Symposium on VLSI Technology
City	Honolulu, HI, USA
Period	7/06/94 → 9/06/94

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10.1109/VLSIT.1994.324417

Cite this

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title = "New hot-carrier degradation mechanisms in 0.25 μm PMOSFETs",

abstract = "PMOSFET hot-carrier reliability is often proposed to be limited by negative oxide charge. We show that interface states determine the lifetime in deep submicron PMOSFETs. Clear evidence for additional positive oxide-charge generation is presented for the first time. The bias-length- and time dependences are measured for all three degradation mechanisms. Combining these three mechanism describes the time dependence of PMOSFET degradation convincingly for many geometries at many bias conditions.",

author = "R. Woltjer and Paulzen, {G. M.} and Pomp, {H. G.} and H. Lifka and Woerlee, {P. H.}",

year = "1994",

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pages = "141--142",

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note = "1994 Symposium on VLSI Technology ; Conference date: 07-06-1994 Through 09-06-1994",

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T1 - New hot-carrier degradation mechanisms in 0.25 μm PMOSFETs

AU - Woltjer, R.

AU - Paulzen, G. M.

AU - Pomp, H. G.

AU - Lifka, H.

AU - Woerlee, P. H.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - PMOSFET hot-carrier reliability is often proposed to be limited by negative oxide charge. We show that interface states determine the lifetime in deep submicron PMOSFETs. Clear evidence for additional positive oxide-charge generation is presented for the first time. The bias-length- and time dependences are measured for all three degradation mechanisms. Combining these three mechanism describes the time dependence of PMOSFET degradation convincingly for many geometries at many bias conditions.

AB - PMOSFET hot-carrier reliability is often proposed to be limited by negative oxide charge. We show that interface states determine the lifetime in deep submicron PMOSFETs. Clear evidence for additional positive oxide-charge generation is presented for the first time. The bias-length- and time dependences are measured for all three degradation mechanisms. Combining these three mechanism describes the time dependence of PMOSFET degradation convincingly for many geometries at many bias conditions.

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U2 - 10.1109/VLSIT.1994.324417

DO - 10.1109/VLSIT.1994.324417

M3 - Conference contribution

AN - SCOPUS:0028602210

SN - 0-7803-1921-4

SP - 141

EP - 142

BT - 1994 VLSI Technology Symposium

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 1994 Symposium on VLSI Technology

Y2 - 7 June 1994 through 9 June 1994

ER -

New hot-carrier degradation mechanisms in 0.25 μm PMOSFETs

Abstract

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