New hot-carrier degradation mechanisms in 0.25 μm PMOSFETs

R. Woltjer, G. M. Paulzen, H. G. Pomp, H. Lifka, P. H. Woerlee

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

PMOSFET hot-carrier reliability is often proposed to be limited by negative oxide charge. We show that interface states determine the lifetime in deep submicron PMOSFETs. Clear evidence for additional positive oxide-charge generation is presented for the first time. The bias-length- and time dependences are measured for all three degradation mechanisms. Combining these three mechanism describes the time dependence of PMOSFET degradation convincingly for many geometries at many bias conditions.

Original languageEnglish
Title of host publication1994 VLSI Technology Symposium
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages141-142
Number of pages2
ISBN (Print)0-7803-1921-4
DOIs
Publication statusPublished - 1 Dec 1994
Externally publishedYes
Event1994 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 7 Jun 19949 Jun 1994

Conference

Conference1994 Symposium on VLSI Technology
CityHonolulu, HI, USA
Period7/06/949/06/94

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