New high rate deposition tool for hydrogenated amorphous silicon (a-Si:H) thin film solar cells

B.A. Korevaar, W.M.M. Kessels, A.H.M. Smets, B.S. Girwar, M.J.F. Sande, van de, J.W. Metselaar, M.C.M. Sanden, van de, R.A.C.M.M. Swaaij, van, D.C. Schram

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

In the expanding thermal plasma set-up of the Eindhoven University of Technology relatively high deposition rates (10 nm/s) are obtained for the deposition of hydrogenated amorphous silicon. High deposition rate is one of the ways to decrease the costs of the solar cell. The opto-electronic and material properties of the films are very promising [1]. For this reason a-Si:H solar cells will in the future be made in a co-operation between the universities of Delft (DIMES) and Eindhoven (CPS). The set-up that is built to realise this consists of a RF-PECVD part for the doped layers and an expanding thermal cascaded arc plasma to deposit the intrinsic layer at high deposition rates. So far the best intrinsic layers are grown at temperatures of 400 C, thus requiring n- and p-doped layers which are stable at high temperature.
Original languageEnglish
Title of host publicationProceedings presented at the 1st Annual Workshop on Semiconductor Advances for Future Electronics, (SAFE), November 25-27, 1998, Mierlo, the Netherlands
EditorsJ.P. Veen
PublisherSTW Technology Foundation
Pages295-299
ISBN (Print)90-73461-15-4
Publication statusPublished - 1998
Eventconference; the 1st Annual Workshop on Semiconductor Advances for Future Electronics, (SAFE), November 25-27, 1998, Mierlo, the Netherlands; 1998-11-25; 1998-11-27 -
Duration: 25 Nov 199827 Nov 1998

Conference

Conferenceconference; the 1st Annual Workshop on Semiconductor Advances for Future Electronics, (SAFE), November 25-27, 1998, Mierlo, the Netherlands; 1998-11-25; 1998-11-27
Period25/11/9827/11/98
Otherthe 1st Annual Workshop on Semiconductor Advances for Future Electronics, (SAFE), November 25-27, 1998, Mierlo, the Netherlands

Fingerprint Dive into the research topics of 'New high rate deposition tool for hydrogenated amorphous silicon (a-Si:H) thin film solar cells'. Together they form a unique fingerprint.

  • Cite this

    Korevaar, B. A., Kessels, W. M. M., Smets, A. H. M., Girwar, B. S., Sande, van de, M. J. F., Metselaar, J. W., Sanden, van de, M. C. M., Swaaij, van, R. A. C. M. M., & Schram, D. C. (1998). New high rate deposition tool for hydrogenated amorphous silicon (a-Si:H) thin film solar cells. In J. P. Veen (Ed.), Proceedings presented at the 1st Annual Workshop on Semiconductor Advances for Future Electronics, (SAFE), November 25-27, 1998, Mierlo, the Netherlands (pp. 295-299). STW Technology Foundation.