New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Benjamin Iñiguez (Corresponding author), Arokia Nathan, Alexander Kloes, Yvan Bonnassieux, Krunoslav Romanjek, Micael Charbonneau, Jan Laurens van der Steen, Gerwin Gelinck, Thomas Gneiting, Firas Mohamed, Gérard Ghibaudo, Antonio Cerdeira, Magali Estrada, Slobodan Mijalkovic, Ahmed Nejim

Research output: Contribution to journalReview articlepeer-review

12 Citations (Scopus)
386 Downloads (Pure)

Abstract

We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.

Original languageEnglish
Pages (from-to)911-932
Number of pages22
JournalIEEE Journal of the Electron Devices Society
Volume9
DOIs
Publication statusPublished - 2021

Bibliographical note

Publisher Copyright:
© 2013 IEEE.

Keywords

  • organic thin film transistors
  • semiconductor device modeling
  • semiconductor device noise
  • Thin film transistors

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