TY - JOUR
T1 - New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs
AU - Iñiguez, Benjamin
AU - Nathan, Arokia
AU - Kloes, Alexander
AU - Bonnassieux, Yvan
AU - Romanjek, Krunoslav
AU - Charbonneau, Micael
AU - van der Steen, Jan Laurens
AU - Gelinck, Gerwin
AU - Gneiting, Thomas
AU - Mohamed, Firas
AU - Ghibaudo, Gérard
AU - Cerdeira, Antonio
AU - Estrada, Magali
AU - Mijalkovic, Slobodan
AU - Nejim, Ahmed
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2021
Y1 - 2021
N2 - We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.
AB - We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.
KW - organic thin film transistors
KW - semiconductor device modeling
KW - semiconductor device noise
KW - Thin film transistors
UR - http://www.scopus.com/inward/record.url?scp=85114642548&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2021.3106836
DO - 10.1109/JEDS.2021.3106836
M3 - Review article
AN - SCOPUS:85114642548
VL - 9
SP - 911
EP - 932
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
ER -