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Neutron-induced failure in super-junction, IGBT, and SiC power devices

  • A. Griffoni
  • , J. Duivenbode, van
  • , D. Linten
  • , E. Simoen
  • , P. Rech
  • , L. Dilillo
  • , F. Wrobel
  • , P. Verbist
  • , G. Groeseneken

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.
Original languageEnglish
Title of host publicationProceedings of 12th European Conference on Radiation Effects on Components and Systems(Radecs), 19-23 September 2011, Sevilla, Spain
PublisherInstitute of Electrical and Electronics Engineers
ISBN (Print)978-1-4577-0585-4
DOIs
Publication statusPublished - 2011
Eventconference; Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on; 2011-09-19; 2011-09-23 -
Duration: 19 Sept 201123 Sept 2011

Conference

Conferenceconference; Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on; 2011-09-19; 2011-09-23
Period19/09/1123/09/11
OtherRadiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

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