Neutron-induced failure in silicon IGBTs, silicon super-junction and SiC MOSFETs

A. Griffoni, J. Duivenbode, van, D. Linten, E. Simoen, P. Rech, L. Dilillo, F. Wrobel, P. Verbist, G. Groeseneken

Research output: Contribution to journalArticleAcademicpeer-review

26 Citations (Scopus)
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Abstract

50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.
Original languageEnglish
Pages (from-to)866-871
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume59
Issue number4
DOIs
Publication statusPublished - 2012

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