Neutron-induced failure in silicon IGBTs, silicon super-junction and SiC MOSFETs

A. Griffoni; J. Duivenbode, van; D. Linten; E. Simoen; P. Rech; L. Dilillo; F. Wrobel; P. Verbist; G. Groeseneken

doi:10.1109/TNS.2011.2180924

Neutron-induced failure in silicon IGBTs, silicon super-junction and SiC MOSFETs

A. Griffoni, J. Duivenbode, van, D. Linten, E. Simoen, P. Rech, L. Dilillo, F. Wrobel, P. Verbist, G. Groeseneken

Electromechanics and Power Electronics

Research output: Contribution to journal › Article › Academic › peer-review

46 Citations (Scopus)

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Abstract

50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.

Original language	English
Pages (from-to)	866-871
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	59
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2011.2180924
Publication status	Published - 2012

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title = "Neutron-induced failure in silicon IGBTs, silicon super-junction and SiC MOSFETs",

abstract = "50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.",

author = "A. Griffoni and {Duivenbode, van}, J. and D. Linten and E. Simoen and P. Rech and L. Dilillo and F. Wrobel and P. Verbist and G. Groeseneken",

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AU - Griffoni, A.

AU - Duivenbode, van, J.

AU - Linten, D.

AU - Simoen, E.

AU - Rech, P.

AU - Dilillo, L.

AU - Wrobel, F.

AU - Verbist, P.

AU - Groeseneken, G.

PY - 2012

Y1 - 2012

N2 - 50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.

AB - 50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.

U2 - 10.1109/TNS.2011.2180924

DO - 10.1109/TNS.2011.2180924

M3 - Article

SN - 0018-9499

VL - 59

SP - 866

EP - 871

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 4

ER -

Neutron-induced failure in silicon IGBTs, silicon super-junction and SiC MOSFETs

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