Neutron diffraction on the diluted magnetic semiconductor tin manganese telluride

C.W.H.M. Vennix; E. Frikkee; H.J.M. Swagten; K. Kopinga; W.J.M. Jonge, de

doi:10.1063/1.347805

Neutron diffraction on the diluted magnetic semiconductor tin manganese telluride

C.W.H.M. Vennix, E. Frikkee, H.J.M. Swagten, K. Kopinga, W.J.M. Jonge, de

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

In the diluted magnetic semiconductor Sn1-xMnxTe, magnetic ordering occurs at low temperature when the charge carrier density p exceeds a critical value. By means of single-crystal neutron diffraction on samples with x=0.03, p = 7 × 1020 cm-3 and x=0.06, p = 11 × 1020 cm-3, we have shown that this ordered phase is ferromagnetic. For the 6% Mn crystal indications were found for magnetic fluctuations just below the ordering temperature. The experimental results rule out the existence of a (reentrant) spin-glass phase at these Mn concentrations and charge carrier densities.

Original language	English
Pages (from-to)	6025-6027
Number of pages	3
Journal	Journal of Applied Physics
Volume	69
Issue number	8
DOIs	https://doi.org/10.1063/1.347805
Publication status	Published - 1991

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@article{64b9cc13e0154343a3e02ea96dad05ef,

title = "Neutron diffraction on the diluted magnetic semiconductor tin manganese telluride",

abstract = "In the diluted magnetic semiconductor Sn1-xMnxTe, magnetic ordering occurs at low temperature when the charge carrier density p exceeds a critical value. By means of single-crystal neutron diffraction on samples with x=0.03, p = 7 × 1020 cm-3 and x=0.06, p = 11 × 1020 cm-3, we have shown that this ordered phase is ferromagnetic. For the 6% Mn crystal indications were found for magnetic fluctuations just below the ordering temperature. The experimental results rule out the existence of a (reentrant) spin-glass phase at these Mn concentrations and charge carrier densities.",

author = "C.W.H.M. Vennix and E. Frikkee and H.J.M. Swagten and K. Kopinga and {Jonge, de}, W.J.M.",

year = "1991",

doi = "10.1063/1.347805",

language = "English",

volume = "69",

pages = "6025--6027",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Neutron diffraction on the diluted magnetic semiconductor tin manganese telluride

AU - Vennix, C.W.H.M.

AU - Frikkee, E.

AU - Swagten, H.J.M.

AU - Kopinga, K.

AU - Jonge, de, W.J.M.

PY - 1991

Y1 - 1991

N2 - In the diluted magnetic semiconductor Sn1-xMnxTe, magnetic ordering occurs at low temperature when the charge carrier density p exceeds a critical value. By means of single-crystal neutron diffraction on samples with x=0.03, p = 7 × 1020 cm-3 and x=0.06, p = 11 × 1020 cm-3, we have shown that this ordered phase is ferromagnetic. For the 6% Mn crystal indications were found for magnetic fluctuations just below the ordering temperature. The experimental results rule out the existence of a (reentrant) spin-glass phase at these Mn concentrations and charge carrier densities.

AB - In the diluted magnetic semiconductor Sn1-xMnxTe, magnetic ordering occurs at low temperature when the charge carrier density p exceeds a critical value. By means of single-crystal neutron diffraction on samples with x=0.03, p = 7 × 1020 cm-3 and x=0.06, p = 11 × 1020 cm-3, we have shown that this ordered phase is ferromagnetic. For the 6% Mn crystal indications were found for magnetic fluctuations just below the ordering temperature. The experimental results rule out the existence of a (reentrant) spin-glass phase at these Mn concentrations and charge carrier densities.

U2 - 10.1063/1.347805

DO - 10.1063/1.347805

M3 - Article

VL - 69

SP - 6025

EP - 6027

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -