Abstract
A 4 cm long Er-doped Al/sub 2/O/sub 3/ spiral waveguide amplifier was fabricated on a Si substrate, and integrated with wavelength division multiplexers within a total area of 15 mm/sup 2/. When pumped with 9 mW 1.48 mu m light from a laser diode, the amplifier shows 2.3 dB net optical gain at 1.53 mu m. The gain threshold was 3 mW. The amplifier was doped with Er by ion implantation to a concentration of 2.7*10/sup 20/ cm /sup -3/. The data agree well with calculations based on a model which includes the effects of cooperative upconversion and excited state absorption. For an optimized amplifier, net optical gain of 20 dB is predicted
| Original language | English |
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| Pages (from-to) | 1886-1888 |
| Journal | Applied Physics Letters |
| Volume | 68 |
| Issue number | 14 |
| Publication status | Published - 1996 |