@inproceedings{45dd41236dfa401da1d2647c36aca224,
title = "Net optical gain at 1.53 mu m in an Er-doped Al/sub 2/O/sub 3/ waveguide amplifier on silicon",
abstract = "Planar waveguide amplifiers are one of the key components of integrated optic devices. The integration of amplifiers together with other optical components enables many optical functions to work together on a single chip without optical losses. Erbium is used as an optically active element in waveguide amplifiers because of its intra-4f transition around 1.54 mu m, a standard telecommunications wavelength. Advantages of erbium-doped laser amplifiers are the linear gain response, temperature and polarization insensitivity, and low noise",
author = "\{Hoven, van den\}, G.N. and R.J.I.M. Koper and A. Polman and \{Dam, van\}, C. and \{Uffelen, van\}, J.W.M. and M.K. Smit",
year = "1996",
language = "English",
isbn = "1-557-52435-X",
series = "OSA trends in topics and photonics",
publisher = "Optical Society of America (OSA)",
pages = "119--122",
booktitle = "Optical Amplifiers and Their Applications : from the topical meeting, July 11-13, 1996, Monterey, California",
address = "United States",
}