Near-infrared light-emitting ambipolar organic field-effect transistors

E.C.P. Smits, S. Setayesh, T.D. Anthopoulos, M. Büchel, W. Nijssen, R. Coehoorn, P.W.M. Blom, B. Boer, de, D.M. Leeuw, de

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Abstract

Near-IR light-emitting ambipolar OFETs are demonstrated, employing a squaraine deriv. as the electroactive layer. Efficient control of the emission-region position in the channel is achieved by varying the drain/gate potentials. By using a transport model, combined with exptl. results, strong metal-induced electroluminescence quenching is obsd. when light emission takes place in close proximity to the source-drain electrodes (see figure). [on SciFinder (R)]
Original languageEnglish
Pages (from-to)734-738
JournalAdvanced Materials
Volume19
Issue number5
DOIs
Publication statusPublished - 2007

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