Near-infrared light-emitting ambipolar organic field-effect transistors

E.C.P. Smits; S. Setayesh; T.D. Anthopoulos; M. Büchel; W. Nijssen; R. Coehoorn; P.W.M. Blom; B. Boer, de; D.M. Leeuw, de

doi:10.1002/adma.200600999

Near-infrared light-emitting ambipolar organic field-effect transistors

E.C.P. Smits, S. Setayesh, T.D. Anthopoulos, M. Büchel, W. Nijssen, R. Coehoorn, P.W.M. Blom, B. Boer, de, D.M. Leeuw, de

Molecular Materials and Nanosystems

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Near-IR light-emitting ambipolar OFETs are demonstrated, employing a squaraine deriv. as the electroactive layer. Efficient control of the emission-region position in the channel is achieved by varying the drain/gate potentials. By using a transport model, combined with exptl. results, strong metal-induced electroluminescence quenching is obsd. when light emission takes place in close proximity to the source-drain electrodes (see figure). [on SciFinder (R)]

Original language	English
Pages (from-to)	734-738
Journal	Advanced Materials
Volume	19
Issue number	5
DOIs	https://doi.org/10.1002/adma.200600999
Publication status	Published - 2007

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10.1002/adma.200600999

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@article{4205f60e42284beea13e9841bd71bfea,

title = "Near-infrared light-emitting ambipolar organic field-effect transistors",

abstract = "Near-IR light-emitting ambipolar OFETs are demonstrated, employing a squaraine deriv. as the electroactive layer. Efficient control of the emission-region position in the channel is achieved by varying the drain/gate potentials. By using a transport model, combined with exptl. results, strong metal-induced electroluminescence quenching is obsd. when light emission takes place in close proximity to the source-drain electrodes (see figure). [on SciFinder (R)]",

author = "E.C.P. Smits and S. Setayesh and T.D. Anthopoulos and M. B{\"u}chel and W. Nijssen and R. Coehoorn and P.W.M. Blom and {Boer, de}, B. and {Leeuw, de}, D.M.",

year = "2007",

doi = "10.1002/adma.200600999",

language = "English",

volume = "19",

pages = "734--738",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "5",

}

TY - JOUR

T1 - Near-infrared light-emitting ambipolar organic field-effect transistors

AU - Smits, E.C.P.

AU - Setayesh, S.

AU - Anthopoulos, T.D.

AU - Büchel, M.

AU - Nijssen, W.

AU - Coehoorn, R.

AU - Blom, P.W.M.

AU - Boer, de, B.

AU - Leeuw, de, D.M.

PY - 2007

Y1 - 2007

N2 - Near-IR light-emitting ambipolar OFETs are demonstrated, employing a squaraine deriv. as the electroactive layer. Efficient control of the emission-region position in the channel is achieved by varying the drain/gate potentials. By using a transport model, combined with exptl. results, strong metal-induced electroluminescence quenching is obsd. when light emission takes place in close proximity to the source-drain electrodes (see figure). [on SciFinder (R)]

AB - Near-IR light-emitting ambipolar OFETs are demonstrated, employing a squaraine deriv. as the electroactive layer. Efficient control of the emission-region position in the channel is achieved by varying the drain/gate potentials. By using a transport model, combined with exptl. results, strong metal-induced electroluminescence quenching is obsd. when light emission takes place in close proximity to the source-drain electrodes (see figure). [on SciFinder (R)]

U2 - 10.1002/adma.200600999

DO - 10.1002/adma.200600999

M3 - Article

SN - 0935-9648

VL - 19

SP - 734

EP - 738

JO - Advanced Materials

JF - Advanced Materials

IS - 5

ER -

Near-infrared light-emitting ambipolar organic field-effect transistors

Abstract

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