Abstract
Low-dimensional semiconductor structures grown by molecular beam epitaxy on a patterned (311)A GaAs substrate are investigated by near-field spectroscopy at a temperature of 10 K. In particular, the two-dimensional potential profiles of quantum wire and coupled wire-dot structures are determined from photoluminescence (PL) measurements with a spatial resolution of 150 nm. Also presented is an optical method for investigating carrier transport in low-dimensional systems involving performing spatially resolved PL excitation measurements on the wire-dot structure.
Original language | English |
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Pages (from-to) | 749-753 |
Journal | Physica Status Solidi A : Applied Research |
Volume | 190 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2002 |