Near-field optical imaging and spectroscopy of single GaAs quantum wires

V. Emiliani, F. Intonti, Ch. Lienau, T. Elsaesser, R. Nötzel, K.H. Ploog

Research output: Contribution to journalArticleAcademicpeer-review


Low-dimensional semiconductor structures grown by molecular beam epitaxy on a patterned (311)A GaAs substrate are investigated by near-field spectroscopy at a temperature of 10 K. In particular, the two-dimensional potential profiles of quantum wire and coupled wire-dot structures are determined from photoluminescence (PL) measurements with a spatial resolution of 150 nm. Also presented is an optical method for investigating carrier transport in low-dimensional systems involving performing spatially resolved PL excitation measurements on the wire-dot structure.
Original languageEnglish
Pages (from-to)749-753
JournalPhysica Status Solidi A : Applied Research
Issue number3
Publication statusPublished - 2002


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