Nature of the optical transition in (In,Ga)AS(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation

C. Robert, C. Cornet, K.P. da Silva, G. Turban, S.J.C. Mauger, T.N. Thanh, J. Even, J.M. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, P. Barate, X. Marie, P.M. Koenraad, M.I. Alonso, N. Goni, N. Bertru, O. DurandA. Corre, Le

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Abstract

The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.
Original languageEnglish
Title of host publicationThe 25th International Conference on Indium Phosphide and Related Materials (IPRM), 19-23 May 2013, Kobe
Place of PublicationNew York
PublisherInstitute of Electrical and Electronics Engineers
Pages1-2
ISBN (Print)978-1-4673-6132-3
Publication statusPublished - 2013
Event25th International Conference on Indium Phosphide and Related Materials (IPRM 2013) - Kobe, Japan
Duration: 19 May 201323 May 2013
Conference number: 25

Conference

Conference25th International Conference on Indium Phosphide and Related Materials (IPRM 2013)
Abbreviated titleIPRM 2013
CountryJapan
CityKobe
Period19/05/1323/05/13
Other25th International Conference on Indium Phosphide and Related materials (IPRM)

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