Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells

J. Löffler, R.E.I. Schropp, R. Groenen, M.C.M. van de Sanden, J.L. Linden

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

Natively textured ZnO layers for the application as front electrode material in amorphous silicon pin solar cells have been deposited by Expanding Thermal Plasma Chemical Vapor Deposition. Films deposited in the temperature regime from 150 to 350°C at a rate between 0.65 and 0.75 nm/s have been characterteed with respect to their optical, electrical and structural properties. Results comparable to Asahi U-type SnO2:F have been obtained for these layers. First solar cells on ZnO, which was deposited at 250°C and 350°C, show an efficiency approaching 10%, only slightly lower than on Asahi U-type SnO2:F.

Original languageEnglish
Title of host publicationConference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages892-895
Number of pages4
ISBN (Print)0780357728
DOIs
Publication statusPublished - 1 Jan 2000
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: 15 Sep 200022 Sep 2000

Conference

Conference28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period15/09/0022/09/00

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    Löffler, J., Schropp, R. E. I., Groenen, R., van de Sanden, M. C. M., & Linden, J. L. (2000). Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells. In Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000 (pp. 892-895). [916027] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2000.916027