Abstract
Natively textured ZnO layers for the application as front electrode material in amorphous silicon pin solar cells have been deposited by Expanding Thermal Plasma Chemical Vapor Deposition. Films deposited in the temperature regime from 150 to 350°C at a rate between 0.65 and 0.75 nm/s have been characterteed with respect to their optical, electrical and structural properties. Results comparable to Asahi U-type SnO2:F have been obtained for these layers. First solar cells on ZnO, which was deposited at 250°C and 350°C, show an efficiency approaching 10%, only slightly lower than on Asahi U-type SnO2:F.
Original language | English |
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Title of host publication | Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000 |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 892-895 |
Number of pages | 4 |
ISBN (Print) | 0780357728 |
DOIs | |
Publication status | Published - 1 Jan 2000 |
Event | 28th IEEE Photovoltaic Specialists Conference (PVSC 2000) - Anchorage Hilton Hotel, Anchorage, United States Duration: 15 Sept 2000 → 22 Sept 2000 Conference number: 28 |
Conference
Conference | 28th IEEE Photovoltaic Specialists Conference (PVSC 2000) |
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Abbreviated title | PSVC 2000 |
Country/Territory | United States |
City | Anchorage |
Period | 15/09/00 → 22/09/00 |