Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

A. Gaggero; S. Jahanmirinejad; F. Marsili; F. Mattioli; R. Leoni; D. Bitauld; D. Sahin; G.J. Hamhuis; R. Nötzel; R. Sanjines; A. Fiore

doi:10.1063/1.3496457

Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

A. Gaggero, S. Jahanmirinejad, F. Marsili, F. Mattioli, R. Leoni, D. Bitauld, D. Sahin, G.J. Hamhuis, R. Nötzel, R. Sanjines, A. Fiore

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Abstract

We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350¿°C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at ¿ = 1300 nm and T = 4.2 K.

Original language	English
Article number	151108
Pages (from-to)	151108-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	15
DOIs	https://doi.org/10.1063/1.3496457
Publication status	Published - 2010

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title = "Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications",

abstract = "We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350¿°C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at ¿ = 1300 nm and T = 4.2 K.",

author = "A. Gaggero and S. Jahanmirinejad and F. Marsili and F. Mattioli and R. Leoni and D. Bitauld and D. Sahin and G.J. Hamhuis and R. N{\"o}tzel and R. Sanjines and A. Fiore",

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doi = "10.1063/1.3496457",

language = "English",

volume = "97",

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T1 - Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

AU - Gaggero, A.

AU - Jahanmirinejad, S.

AU - Marsili, F.

AU - Mattioli, F.

AU - Leoni, R.

AU - Bitauld, D.

AU - Sahin, D.

AU - Hamhuis, G.J.

AU - Nötzel, R.

AU - Sanjines, R.

AU - Fiore, A.

PY - 2010

Y1 - 2010

N2 - We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350¿°C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at ¿ = 1300 nm and T = 4.2 K.

AB - We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350¿°C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at ¿ = 1300 nm and T = 4.2 K.

U2 - 10.1063/1.3496457

DO - 10.1063/1.3496457

M3 - Article

SN - 0003-6951

VL - 97

SP - 151108-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151108

ER -

Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

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