TY - PAT
T1 - Nanowire and electronic device
AU - Bakkers, E.P.A.M.
PY - 2005/7/28
Y1 - 2005/7/28
N2 - The nanowire ( 10 ) comprises a first region ( 1 ), a second region ( 2 ), and a third region ( 3 ), wherein the diameter (c) of the second region ( 2 ) is greater than the diameters (a) of the first and the third region ( 1, 3 ), therewith interrupting at least partially the quantization of the nanowire ( 10 ) and giving the second region a smaller bandgap. The second region ( 2 ) has a length (b) in axial direction of less than 100 nm, preferably less than 20 nm. The nanowire ( 10 ) can be used in an (opto-)electronic device having electrodes as a quantum dot, a single-electron transistor, or the like.
AB - The nanowire ( 10 ) comprises a first region ( 1 ), a second region ( 2 ), and a third region ( 3 ), wherein the diameter (c) of the second region ( 2 ) is greater than the diameters (a) of the first and the third region ( 1, 3 ), therewith interrupting at least partially the quantization of the nanowire ( 10 ) and giving the second region a smaller bandgap. The second region ( 2 ) has a length (b) in axial direction of less than 100 nm, preferably less than 20 nm. The nanowire ( 10 ) can be used in an (opto-)electronic device having electrodes as a quantum dot, a single-electron transistor, or the like.
UR - http://v3.espacenet.com/publicationDetails/biblio?DB=EPODOC&adjacent=true&locale=en_gb&FT=D&date=20050728&CC=US&NR=2005161659A1&KC=A1
M3 - Patent publication
M1 - US 20050161659
ER -