The nanowire ( 10 ) comprises a first region ( 1 ), a second region ( 2 ), and a third region ( 3 ), wherein the diameter (c) of the second region ( 2 ) is greater than the diameters (a) of the first and the third region ( 1, 3 ), therewith interrupting at least partially the quantization of the nanowire ( 10 ) and giving the second region a smaller bandgap. The second region ( 2 ) has a length (b) in axial direction of less than 100 nm, preferably less than 20 nm. The nanowire ( 10 ) can be used in an (opto-)electronic device having electrodes as a quantum dot, a single-electron transistor, or the like.
|Patent number||US 20050161659|
|Publication status||Published - 28 Jul 2005|