Nanoscale potential fluctuations in (GaMn)As/GaAs heterostructures : from individual ions to charge clusters and electrostatic quantum dots

A.P. Wijnheijmer; O. Makarovsky; J.K. Garleff; L. Eaves; R.P. Campion; B.L. Gallagher; P.M. Koenraad

doi:10.1021/nl102739y

Nanoscale potential fluctuations in (GaMn)As/GaAs heterostructures : from individual ions to charge clusters and electrostatic quantum dots

A.P. Wijnheijmer, O. Makarovsky, J.K. Garleff, L. Eaves, R.P. Campion, B.L. Gallagher, P.M. Koenraad

Research output: Contribution to journal › Article › Academic › peer-review

6 Citations (Scopus)

3 Downloads (Pure)

Abstract

During growth of the dilute p-type ferromagnetic semiconductor Ga1-xMnxAs, interstitial manganese, Mni2+, is formed when x exceeds 2%. The double donor Mni2+ compensates the free holes that mediate ferromagnetism. Annealing causes out-diffusion of these interstitials, thereby increasing the Curie temperature. Here, we use cross sectional scanning tunneling microscopy and spectroscopy to visualize the potential landscape which arises due to the clustering of Mni2+ in annealed p-i-n (GaMn)As-GaAs double barrier heterostructures. We map the local minima in the potential landscape, link them to clusters of individual Mni2+ ions, and show that the ions are doubly charged.

Original language	English
Pages (from-to)	4874-4879
Number of pages	6
Journal	Nano Letters
Volume	10
Issue number	12
DOIs	https://doi.org/10.1021/nl102739y
Publication status	Published - 2010

Access to Document

10.1021/nl102739y

Cite this

@article{c2426f3f070c4c61ae19312f40db35d9,

title = "Nanoscale potential fluctuations in (GaMn)As/GaAs heterostructures : from individual ions to charge clusters and electrostatic quantum dots",

abstract = "During growth of the dilute p-type ferromagnetic semiconductor Ga1-xMnxAs, interstitial manganese, Mni2+, is formed when x exceeds 2%. The double donor Mni2+ compensates the free holes that mediate ferromagnetism. Annealing causes out-diffusion of these interstitials, thereby increasing the Curie temperature. Here, we use cross sectional scanning tunneling microscopy and spectroscopy to visualize the potential landscape which arises due to the clustering of Mni2+ in annealed p-i-n (GaMn)As-GaAs double barrier heterostructures. We map the local minima in the potential landscape, link them to clusters of individual Mni2+ ions, and show that the ions are doubly charged.",

author = "A.P. Wijnheijmer and O. Makarovsky and J.K. Garleff and L. Eaves and R.P. Campion and B.L. Gallagher and P.M. Koenraad",

year = "2010",

doi = "10.1021/nl102739y",

language = "English",

volume = "10",

pages = "4874--4879",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Nanoscale potential fluctuations in (GaMn)As/GaAs heterostructures : from individual ions to charge clusters and electrostatic quantum dots

AU - Wijnheijmer, A.P.

AU - Makarovsky, O.

AU - Garleff, J.K.

AU - Eaves, L.

AU - Campion, R.P.

AU - Gallagher, B.L.

AU - Koenraad, P.M.

PY - 2010

Y1 - 2010

N2 - During growth of the dilute p-type ferromagnetic semiconductor Ga1-xMnxAs, interstitial manganese, Mni2+, is formed when x exceeds 2%. The double donor Mni2+ compensates the free holes that mediate ferromagnetism. Annealing causes out-diffusion of these interstitials, thereby increasing the Curie temperature. Here, we use cross sectional scanning tunneling microscopy and spectroscopy to visualize the potential landscape which arises due to the clustering of Mni2+ in annealed p-i-n (GaMn)As-GaAs double barrier heterostructures. We map the local minima in the potential landscape, link them to clusters of individual Mni2+ ions, and show that the ions are doubly charged.

AB - During growth of the dilute p-type ferromagnetic semiconductor Ga1-xMnxAs, interstitial manganese, Mni2+, is formed when x exceeds 2%. The double donor Mni2+ compensates the free holes that mediate ferromagnetism. Annealing causes out-diffusion of these interstitials, thereby increasing the Curie temperature. Here, we use cross sectional scanning tunneling microscopy and spectroscopy to visualize the potential landscape which arises due to the clustering of Mni2+ in annealed p-i-n (GaMn)As-GaAs double barrier heterostructures. We map the local minima in the potential landscape, link them to clusters of individual Mni2+ ions, and show that the ions are doubly charged.

U2 - 10.1021/nl102739y

DO - 10.1021/nl102739y

M3 - Article

C2 - 21038865

SN - 1530-6984

VL - 10

SP - 4874

EP - 4879

JO - Nano Letters

JF - Nano Letters

IS - 12

ER -

Nanoscale potential fluctuations in (GaMn)As/GaAs heterostructures : from individual ions to charge clusters and electrostatic quantum dots

Abstract

Access to Document

Fingerprint

Cite this