Nanorod solar cell with an ultrathin a-Si:H absorber layer

Y. Kuang; K.H.M. Werf, van der; Z.S. Houweling; R.E.I. Schropp

doi:10.1063/1.3567527

Nanorod solar cell with an ultrathin a-Si:H absorber layer

Y. Kuang, K.H.M. Werf, van der, Z.S. Houweling, R.E.I. Schropp

Plasma & Materials Processing

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Abstract

We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO)nanorod arrays. The ZnOnanorods were prepared by aqueous chemical growth at 80¿°C . The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm 2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker (~75 nm) a-Si:H absorber layers.

Original language	English
Article number	113111
Pages (from-to)	113111-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	98
DOIs	https://doi.org/10.1063/1.3567527
Publication status	Published - 2011

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abstract = "We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO)nanorod arrays. The ZnOnanorods were prepared by aqueous chemical growth at 80¿°C . The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm 2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker (~75 nm) a-Si:H absorber layers.",

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AU - Werf, van der, K.H.M.

AU - Houweling, Z.S.

AU - Schropp, R.E.I.

PY - 2011

Y1 - 2011

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AB - We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO)nanorod arrays. The ZnOnanorods were prepared by aqueous chemical growth at 80¿°C . The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm 2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker (~75 nm) a-Si:H absorber layers.

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DO - 10.1063/1.3567527

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

M1 - 113111

ER -

Nanorod solar cell with an ultrathin a-Si:H absorber layer

Abstract

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