Abstract
We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO)nanorod arrays. The ZnOnanorods were prepared by aqueous chemical growth at 80¿°C . The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm 2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker (~75 nm) a-Si:H absorber layers.
Original language | English |
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Article number | 113111 |
Pages (from-to) | 113111-1/3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 98 |
DOIs | |
Publication status | Published - 2011 |