Nanorod solar cell with an ultrathin a-Si:H absorber layer

Y. Kuang; K.H.M. Werf, van der; Z.S. Houweling; R.E.I. Schropp

doi:10.1063/1.3567527

Nanorod solar cell with an ultrathin a-Si:H absorber layer

Y. Kuang, K.H.M. Werf, van der, Z.S. Houweling, R.E.I. Schropp

Plasma & Materials Processing

Research output: Contribution to journal › Article › Academic › peer-review

72 Citations (Scopus)

125 Downloads (Pure)

Abstract

We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO)nanorod arrays. The ZnOnanorods were prepared by aqueous chemical growth at 80¿°C . The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm 2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker (~75 nm) a-Si:H absorber layers.

Original language	English
Article number	113111
Pages (from-to)	113111-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	98
DOIs	https://doi.org/10.1063/1.3567527
Publication status	Published - 2011

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

Access to Document

10.1063/1.3567527

publishers versionFinal published version, 278 KB

Fingerprint Dive into the research topics of 'Nanorod solar cell with an ultrathin a-Si:H absorber layer'. Together they form a unique fingerprint.

Cite this

@article{5cb6ad72b79d4eca974f95c5523d550d,

title = "Nanorod solar cell with an ultrathin a-Si:H absorber layer",

abstract = "We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO)nanorod arrays. The ZnOnanorods were prepared by aqueous chemical growth at 80¿°C . The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm 2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker (~75 nm) a-Si:H absorber layers.",

author = "Y. Kuang and {Werf, van der}, K.H.M. and Z.S. Houweling and R.E.I. Schropp",

year = "2011",

doi = "10.1063/1.3567527",

language = "English",

volume = "98",

pages = "113111--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Nanorod solar cell with an ultrathin a-Si:H absorber layer

AU - Kuang, Y.

AU - Werf, van der, K.H.M.

AU - Houweling, Z.S.

AU - Schropp, R.E.I.

PY - 2011

Y1 - 2011

N2 - We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO)nanorod arrays. The ZnOnanorods were prepared by aqueous chemical growth at 80¿°C . The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm 2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker (~75 nm) a-Si:H absorber layers.

AB - We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO)nanorod arrays. The ZnOnanorods were prepared by aqueous chemical growth at 80¿°C . The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm 2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker (~75 nm) a-Si:H absorber layers.

U2 - 10.1063/1.3567527

DO - 10.1063/1.3567527

M3 - Article

VL - 98

SP - 113111-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

M1 - 113111

ER -