Nanorod solar cell with an ultrathin a-Si:H absorber layer

Y. Kuang, K.H.M. Werf, van der, Z.S. Houweling, R.E.I. Schropp

Research output: Contribution to journalArticleAcademicpeer-review

72 Citations (Scopus)
125 Downloads (Pure)

Abstract

We propose a nanostructured three-dimensional (nano-3D) solar cell design employing an ultrathin hydrogenated amorphous silicon (a-Si:H) n-i-p junction deposited on zinc oxide (ZnO)nanorod arrays. The ZnOnanorods were prepared by aqueous chemical growth at 80¿°C . The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm 2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker (~75 nm) a-Si:H absorber layers.
Original languageEnglish
Article number113111
Pages (from-to)113111-1/3
Number of pages3
JournalApplied Physics Letters
Volume98
DOIs
Publication statusPublished - 2011

Fingerprint Dive into the research topics of 'Nanorod solar cell with an ultrathin a-Si:H absorber layer'. Together they form a unique fingerprint.

Cite this