Nanophotonic integrated active-passive InP membrane devices and circuits fabricated using ArF scanner lithography

Aleksandr Zozulia; Jeroen Bolk; P.J. (René) van Veldhoven; Gleb Nazarikov; Vadim G. Pogoretskiy; Samir Rihani; Graham  Berry; Kevin A. Williams; Yuqing Jiao

doi:10.1016/j.mne.2024.100258

Nanophotonic integrated active-passive InP membrane devices and circuits fabricated using ArF scanner lithography

Aleksandr Zozulia (Corresponding author), Jeroen Bolk, P.J. (René) van Veldhoven, Gleb Nazarikov, Vadim G. Pogoretskiy , Samir Rihani, Graham Berry, Kevin A. Williams, Yuqing Jiao

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We present a novel fabrication approach to an integrated nanophotonic platform, based on a III-V membrane bonded to a Si substrate with benzocyclobutene (BCB). The process incorporates a hybrid lithography strategy combining deep-UV and electron-beam lithography on the same wafer. We report for the first time the usage of deep-UV scanner lithography for the fabrication of the active-passive tapers and sub-micron waveguides on the same wafer, which enables better critical dimension control, uniformity, and reproducibility. The platform uses an active-passive butt-joint interface and includes components such as distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers, electro-optical (EO) and electro-absorption (EA) modulators, and sub-micron ultra-confined passive waveguides, all monolithically integrated into a single membrane layer. The active devices have a heat sink achieved by ultra-thin BCB bonding. Lasers demonstrate up to 26 mW of optical power in the waveguide and a direct modulation bandwidth of up to 21 GHz. The modulators show static extinction up to 28.8 dB.

Original language	English
Article number	100258
Number of pages	9
Journal	Micro and Nano Engineering
Volume	23
DOIs	https://doi.org/10.1016/j.mne.2024.100258
Publication status	Published - Jun 2024

Funding

This work was supported by Huawei research grant HDMI and the Dutch NWO Zwaartekracht Grant \u201CResearch Center for Integrated Nanophotonics\u201D. The authors would like to thank Nanolab @TU/e for access to the fabrication facilities and Richard Schatz from KTH Stockholm for the LaserMatrix software which was used for laser design.

Funders	Funder number
Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Keywords

DFB lasers
Electro-optical modulators
InP membrane
Photonic integration
Scanner lithography

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title = "Nanophotonic integrated active-passive InP membrane devices and circuits fabricated using ArF scanner lithography",

abstract = "We present a novel fabrication approach to an integrated nanophotonic platform, based on a III-V membrane bonded to a Si substrate with benzocyclobutene (BCB). The process incorporates a hybrid lithography strategy combining deep-UV and electron-beam lithography on the same wafer. We report for the first time the usage of deep-UV scanner lithography for the fabrication of the active-passive tapers and sub-micron waveguides on the same wafer, which enables better critical dimension control, uniformity, and reproducibility. The platform uses an active-passive butt-joint interface and includes components such as distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers, electro-optical (EO) and electro-absorption (EA) modulators, and sub-micron ultra-confined passive waveguides, all monolithically integrated into a single membrane layer. The active devices have a heat sink achieved by ultra-thin BCB bonding. Lasers demonstrate up to 26 mW of optical power in the waveguide and a direct modulation bandwidth of up to 21 GHz. The modulators show static extinction up to 28.8 dB.",

keywords = "DFB lasers, Electro-optical modulators, InP membrane, Photonic integration, Scanner lithography",

author = "Aleksandr Zozulia and Jeroen Bolk and {van Veldhoven}, {P.J. (Ren{\'e})} and Gleb Nazarikov and Pogoretskiy, {Vadim G.} and Samir Rihani and Graham Berry and Williams, {Kevin A.} and Yuqing Jiao",

year = "2024",

month = jun,

doi = "10.1016/j.mne.2024.100258",

language = "English",

volume = "23",

journal = "Micro and Nano Engineering",

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T1 - Nanophotonic integrated active-passive InP membrane devices and circuits fabricated using ArF scanner lithography

AU - Zozulia, Aleksandr

AU - Bolk, Jeroen

AU - van Veldhoven, P.J. (René)

AU - Nazarikov, Gleb

AU - Pogoretskiy , Vadim G.

AU - Rihani, Samir

AU - Berry, Graham

AU - Williams, Kevin A.

AU - Jiao, Yuqing

PY - 2024/6

Y1 - 2024/6

N2 - We present a novel fabrication approach to an integrated nanophotonic platform, based on a III-V membrane bonded to a Si substrate with benzocyclobutene (BCB). The process incorporates a hybrid lithography strategy combining deep-UV and electron-beam lithography on the same wafer. We report for the first time the usage of deep-UV scanner lithography for the fabrication of the active-passive tapers and sub-micron waveguides on the same wafer, which enables better critical dimension control, uniformity, and reproducibility. The platform uses an active-passive butt-joint interface and includes components such as distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers, electro-optical (EO) and electro-absorption (EA) modulators, and sub-micron ultra-confined passive waveguides, all monolithically integrated into a single membrane layer. The active devices have a heat sink achieved by ultra-thin BCB bonding. Lasers demonstrate up to 26 mW of optical power in the waveguide and a direct modulation bandwidth of up to 21 GHz. The modulators show static extinction up to 28.8 dB.

AB - We present a novel fabrication approach to an integrated nanophotonic platform, based on a III-V membrane bonded to a Si substrate with benzocyclobutene (BCB). The process incorporates a hybrid lithography strategy combining deep-UV and electron-beam lithography on the same wafer. We report for the first time the usage of deep-UV scanner lithography for the fabrication of the active-passive tapers and sub-micron waveguides on the same wafer, which enables better critical dimension control, uniformity, and reproducibility. The platform uses an active-passive butt-joint interface and includes components such as distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers, electro-optical (EO) and electro-absorption (EA) modulators, and sub-micron ultra-confined passive waveguides, all monolithically integrated into a single membrane layer. The active devices have a heat sink achieved by ultra-thin BCB bonding. Lasers demonstrate up to 26 mW of optical power in the waveguide and a direct modulation bandwidth of up to 21 GHz. The modulators show static extinction up to 28.8 dB.

KW - DFB lasers

KW - Electro-optical modulators

KW - InP membrane

KW - Photonic integration

KW - Scanner lithography

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U2 - 10.1016/j.mne.2024.100258

DO - 10.1016/j.mne.2024.100258

M3 - Article

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JO - Micro and Nano Engineering

JF - Micro and Nano Engineering

M1 - 100258

ER -

Nanophotonic integrated active-passive InP membrane devices and circuits fabricated using ArF scanner lithography

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