N-Type self-assembled monolayer field-effect transistors for flexible organic electronics

A. Ringk; Christian Roelofs; E.C.P. Smits; C. van der Marel; I. Salzmann; A. Neuhold; G.H. Gelinck; R. Resel; D.M. de Leeuw; P. Strohriegl

doi:10.1016/j.orgel.2013.02.016

N-Type self-assembled monolayer field-effect transistors for flexible organic electronics

A. Ringk
, Christian Roelofs
, E.C.P. Smits
, C. van der Marel
, I. Salzmann
, A. Neuhold
, G.H. Gelinck
, R. Resel
, D.M. de Leeuw
, P. Strohriegl

Materials to Optoelectronic Devices

Research output: Contribution to journal › Article › Academic › peer-review

29 Citations (Scopus)

3 Downloads (Pure)

Abstract

Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet on top of the dielectric. Reliable transistors with electron mobilities on the order of 10^-3 cm²/V s with limited hysteresis were achieved on rigid as well on flexible substrates. Furthermore, a flexible NMOS-bias inverter based on SAMFETs is demonstrated for the first time.

Original language	English
Pages (from-to)	1297-1304
Number of pages	8
Journal	Organic Electronics
Volume	14
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2013.02.016
Publication status	Published - May 2013

Keywords

Flexible transistor
n-Type field-effect transistor
Perylene bisimide
Self-assembled monolayer
Unipolar bias inverter

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10.1016/j.orgel.2013.02.016

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title = "N-Type self-assembled monolayer field-effect transistors for flexible organic electronics",

abstract = "Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet on top of the dielectric. Reliable transistors with electron mobilities on the order of 10-3 cm2/V s with limited hysteresis were achieved on rigid as well on flexible substrates. Furthermore, a flexible NMOS-bias inverter based on SAMFETs is demonstrated for the first time.",

keywords = "Flexible transistor, n-Type field-effect transistor, Perylene bisimide, Self-assembled monolayer, Unipolar bias inverter",

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doi = "10.1016/j.orgel.2013.02.016",

language = "English",

volume = "14",

pages = "1297--1304",

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TY - JOUR

T1 - N-Type self-assembled monolayer field-effect transistors for flexible organic electronics

AU - Ringk, A.

AU - Roelofs, Christian

AU - Smits, E.C.P.

AU - van der Marel, C.

AU - Salzmann, I.

AU - Neuhold, A.

AU - Gelinck, G.H.

AU - Resel, R.

AU - de Leeuw, D.M.

AU - Strohriegl, P.

PY - 2013/5

Y1 - 2013/5

N2 - Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet on top of the dielectric. Reliable transistors with electron mobilities on the order of 10-3 cm2/V s with limited hysteresis were achieved on rigid as well on flexible substrates. Furthermore, a flexible NMOS-bias inverter based on SAMFETs is demonstrated for the first time.

AB - Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet on top of the dielectric. Reliable transistors with electron mobilities on the order of 10-3 cm2/V s with limited hysteresis were achieved on rigid as well on flexible substrates. Furthermore, a flexible NMOS-bias inverter based on SAMFETs is demonstrated for the first time.

KW - Flexible transistor

KW - n-Type field-effect transistor

KW - Perylene bisimide

KW - Self-assembled monolayer

KW - Unipolar bias inverter

UR - https://www.scopus.com/pages/publications/84875294271

U2 - 10.1016/j.orgel.2013.02.016

DO - 10.1016/j.orgel.2013.02.016

M3 - Article

AN - SCOPUS:84875294271

SN - 1566-1199

VL - 14

SP - 1297

EP - 1304

JO - Organic Electronics

JF - Organic Electronics

IS - 5

ER -

N-Type self-assembled monolayer field-effect transistors for flexible organic electronics

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Keywords

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