N-Type self-assembled monolayer field-effect transistors for flexible organic electronics

A. Ringk; Christian Roelofs; E.C.P. Smits; C. van der Marel; I. Salzmann; A. Neuhold; G.H. Gelinck; R. Resel; D.M. de Leeuw; P. Strohriegl

doi:10.1016/j.orgel.2013.02.016

N-Type self-assembled monolayer field-effect transistors for flexible organic electronics

A. Ringk, Christian Roelofs, E.C.P. Smits, C. van der Marel, I. Salzmann, A. Neuhold, G.H. Gelinck, R. Resel, D.M. de Leeuw, P. Strohriegl

Molecular Materials and Nanosystems

Research output: Contribution to journal › Article › Academic › peer-review

29 Citations (Scopus)

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Abstract

Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet on top of the dielectric. Reliable transistors with electron mobilities on the order of 10^-3 cm²/V s with limited hysteresis were achieved on rigid as well on flexible substrates. Furthermore, a flexible NMOS-bias inverter based on SAMFETs is demonstrated for the first time.

Original language	English
Pages (from-to)	1297-1304
Number of pages	8
Journal	Organic Electronics
Volume	14
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2013.02.016
Publication status	Published - May 2013

Keywords

Flexible transistor
n-Type field-effect transistor
Perylene bisimide
Self-assembled monolayer
Unipolar bias inverter

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10.1016/j.orgel.2013.02.016

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title = "N-Type self-assembled monolayer field-effect transistors for flexible organic electronics",

abstract = "Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet on top of the dielectric. Reliable transistors with electron mobilities on the order of 10-3 cm2/V s with limited hysteresis were achieved on rigid as well on flexible substrates. Furthermore, a flexible NMOS-bias inverter based on SAMFETs is demonstrated for the first time.",

keywords = "Flexible transistor, n-Type field-effect transistor, Perylene bisimide, Self-assembled monolayer, Unipolar bias inverter",

author = "A. Ringk and Christian Roelofs and E.C.P. Smits and {van der Marel}, C. and I. Salzmann and A. Neuhold and G.H. Gelinck and R. Resel and {de Leeuw}, D.M. and P. Strohriegl",

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T1 - N-Type self-assembled monolayer field-effect transistors for flexible organic electronics

AU - Ringk, A.

AU - Roelofs, Christian

AU - Smits, E.C.P.

AU - van der Marel, C.

AU - Salzmann, I.

AU - Neuhold, A.

AU - Gelinck, G.H.

AU - Resel, R.

AU - de Leeuw, D.M.

AU - Strohriegl, P.

PY - 2013/5

Y1 - 2013/5

N2 - Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet on top of the dielectric. Reliable transistors with electron mobilities on the order of 10-3 cm2/V s with limited hysteresis were achieved on rigid as well on flexible substrates. Furthermore, a flexible NMOS-bias inverter based on SAMFETs is demonstrated for the first time.

AB - Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet on top of the dielectric. Reliable transistors with electron mobilities on the order of 10-3 cm2/V s with limited hysteresis were achieved on rigid as well on flexible substrates. Furthermore, a flexible NMOS-bias inverter based on SAMFETs is demonstrated for the first time.

KW - Flexible transistor

KW - n-Type field-effect transistor

KW - Perylene bisimide

KW - Self-assembled monolayer

KW - Unipolar bias inverter

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DO - 10.1016/j.orgel.2013.02.016

M3 - Article

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SN - 1566-1199

VL - 14

SP - 1297

EP - 1304

JO - Organic Electronics

JF - Organic Electronics

IS - 5

ER -

N-Type self-assembled monolayer field-effect transistors for flexible organic electronics

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Keywords

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