N-type self-assembled monolayer field-effect transistors

Andreas Ringk, Xiaoran Li, Fatemeh Gholamrezaie, Edsger C.P. Smits, Alfred Neuhold, Armin Moser, Gerwin H. Gelinck, Roland Resel, Dago M. De Leeuw, Peter Strohriegl

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


Within this work we present the synthesis and applications of a novel material designed for n-type self-assembled monolayer field-effect transistors (SAMFETs). Our novel perylene bisimide based molecule was obtained in six steps and is functionalized with a phosphonic acid linker which enables a covalent fixation on aluminum oxide dielectrics. The organic field-effect transistors (OFETs) were fabricated by submerging predefined transistor substrates in a dilute solution of the molecule under ambient conditions. Investigations showed a thickness of about 3 nm for the organic layer which is coincides to the molecular length. The transistors showed bulk-like electron mobilities up to 10-3 cm2/Vs. Due to the absence of bulk current high on/off-ratios were achieved. An increase of the electron mobility with the channel length and XPS investigations point to a complete coverage of the dielectric with a dense monolayer. In addition, a p-type SAMFET based on a thiophene derivative and our new n-type SAMFET were combined to the first CMOS bias inverter based solely on SAMFETs.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors XI
Number of pages8
ISBN (Print)9780819491954
Publication statusPublished - 1 Dec 2012
EventOrganic Field-Effect Transistors XI - San Diego, CA, United States
Duration: 13 Aug 201215 Aug 2012

Publication series

NameProceedings of SPIE


ConferenceOrganic Field-Effect Transistors XI
Country/TerritoryUnited States
CitySan Diego, CA


  • Complementary inverter
  • N-type field-effect transistor
  • Organic circuits
  • Perylene bisimide
  • Self-assembled monolayer


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