Multiple-wavelength vertical-cavity laser arrays based on postgrowth lateral-vertical oxidation of AlGaAs

A. Fiore; Y.A. Akulova; J. Ko; E.R. Hegblom; L.A. Coldren

doi:10.1063/1.121795

Multiple-wavelength vertical-cavity laser arrays based on postgrowth lateral-vertical oxidation of AlGaAs

A. Fiore, Y.A. Akulova, J. Ko, E.R. Hegblom, L.A. Coldren

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

8 Citations (Scopus)

142 Downloads (Pure)

Abstract

We demonstrate that combined lateral-vertical oxidn. of AlGaAs can be used to change the resonant wavelength of an optical cavity after the single epitaxial growth. A multiple-wavelength array of vertical-cavity surface-emitting lasers with a 48 nm wavelength span was realized using this technique. [on SciFinder (R)]

Original language	English
Pages (from-to)	282-284
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	3
DOIs	https://doi.org/10.1063/1.121795
Publication status	Published - 1998

Access to Document

10.1063/1.121795

Metis212595Final published version, 72 KB

Cite this

@article{2df4b193aaf64595acdceafbcce2b61e,

title = "Multiple-wavelength vertical-cavity laser arrays based on postgrowth lateral-vertical oxidation of AlGaAs",

abstract = "We demonstrate that combined lateral-vertical oxidn. of AlGaAs can be used to change the resonant wavelength of an optical cavity after the single epitaxial growth. A multiple-wavelength array of vertical-cavity surface-emitting lasers with a 48 nm wavelength span was realized using this technique. [on SciFinder (R)]",

author = "A. Fiore and Y.A. Akulova and J. Ko and E.R. Hegblom and L.A. Coldren",

year = "1998",

doi = "10.1063/1.121795",

language = "English",

volume = "73",

pages = "282--284",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Multiple-wavelength vertical-cavity laser arrays based on postgrowth lateral-vertical oxidation of AlGaAs

AU - Fiore, A.

AU - Akulova, Y.A.

AU - Ko, J.

AU - Hegblom, E.R.

AU - Coldren, L.A.

PY - 1998

Y1 - 1998

N2 - We demonstrate that combined lateral-vertical oxidn. of AlGaAs can be used to change the resonant wavelength of an optical cavity after the single epitaxial growth. A multiple-wavelength array of vertical-cavity surface-emitting lasers with a 48 nm wavelength span was realized using this technique. [on SciFinder (R)]

AB - We demonstrate that combined lateral-vertical oxidn. of AlGaAs can be used to change the resonant wavelength of an optical cavity after the single epitaxial growth. A multiple-wavelength array of vertical-cavity surface-emitting lasers with a 48 nm wavelength span was realized using this technique. [on SciFinder (R)]

U2 - 10.1063/1.121795

DO - 10.1063/1.121795

M3 - Article

VL - 73

SP - 282

EP - 284

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

ER -

Multiple-wavelength vertical-cavity laser arrays based on postgrowth lateral-vertical oxidation of AlGaAs

Abstract

Access to Document

Fingerprint

Cite this