Multiple quantum well structures and high-power lasers of gaas- algaas grown by metalorganic vapor phase epitaxy (MOVPE)

Fred Roozeboom, André Sikkema, Laurens Molenkamp

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)

Abstract

GaAs/AlGaAs GRIN-SCH type multiple quantum well lasers with four wells of 11 nm GaAs, grown in an MOVPE chimney reactor, exhibit an output power as high as 110 mW/facet (CW, 30°C; 5 μm stripe) and 1.3 W/facet (pulsed, 30°C; 53 μm stripe) until catastrophic optical damage occurs. 2000 hours life tests conducted at 60°C and 15 mW CW show no noticeable degradation for the 5 μm stripe laser with a reflective coating on both facets. Raman spectroscopy on similar multiple quantum well structures with 65 GaAs wells is used to ascertain that the wells have minimum residual aluminum- content.

Original languageEnglish
Pages (from-to)331-345
Number of pages15
JournalFiber & Integrated Optics
Volume6
Issue number4
DOIs
Publication statusPublished - 1 Jan 1987
Externally publishedYes

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