Multiple gate oxide technology using fluorine implantation

P. H. Woerlee, M. J. Knitel, V. M.H. Meyssen, R. M.D.A. Velghe, A.T.A. Zegers van Duijnhoven

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)


Fluorine implantation prior to gate oxide growth was used for a multiple gate oxide thickness CMOS technology. With one oxidation step both a thin and thick oxide (thickness between 1.8 nm and 2.8 nm) can be obtained. Low leakage devices with good performance and low off-current were obtained. Crystal defects formed after fluorine implantation resulted in an increased diode leakage current and a strongly enhanced 1/f noise.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsHeiner Ryssel, Gerhard Wachutka, Herbert Grunbacher
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages4
ISBN (Print)2914601018
Publication statusPublished - 1 Jan 2001
Externally publishedYes
Event31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany
Duration: 11 Sept 200113 Sept 2001


Conference31st European Solid-State Device Research Conference, ESSDERC 2001


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