Multiple gate oxide technology using fluorine implantation

P. H. Woerlee; M. J. Knitel; V. M.H. Meyssen; R. M.D.A. Velghe; A.T.A. Zegers van Duijnhoven

doi:10.1109/ESSDERC.2001.195212

Multiple gate oxide technology using fluorine implantation

P. H. Woerlee, M. J. Knitel, V. M.H. Meyssen, R. M.D.A. Velghe, A.T.A. Zegers van Duijnhoven

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

Fluorine implantation prior to gate oxide growth was used for a multiple gate oxide thickness CMOS technology. With one oxidation step both a thin and thick oxide (thickness between 1.8 nm and 2.8 nm) can be obtained. Low leakage devices with good performance and low off-current were obtained. Crystal defects formed after fluorine implantation resulted in an increased diode leakage current and a strongly enhanced 1/f noise.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Heiner Ryssel, Gerhard Wachutka, Herbert Grunbacher
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	107-110
Number of pages	4
ISBN (Print)	2914601018
DOIs	https://doi.org/10.1109/ESSDERC.2001.195212
Publication status	Published - 1 Jan 2001
Externally published	Yes
Event	31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany Duration: 11 Sept 2001 → 13 Sept 2001

Conference

Conference	31st European Solid-State Device Research Conference, ESSDERC 2001
Country/Territory	Germany
City	Nuremberg
Period	11/09/01 → 13/09/01

Access to Document

10.1109/ESSDERC.2001.195212

Cite this

Woerlee, P. H., Knitel, M. J., Meyssen, V. M. H., Velghe, R. M. D. A., & Zegers van Duijnhoven, A. T. A. (2001). Multiple gate oxide technology using fluorine implantation. In H. Ryssel, G. Wachutka, & H. Grunbacher (Eds.), European Solid-State Device Research Conference (pp. 107-110). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ESSDERC.2001.195212

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title = "Multiple gate oxide technology using fluorine implantation",

abstract = "Fluorine implantation prior to gate oxide growth was used for a multiple gate oxide thickness CMOS technology. With one oxidation step both a thin and thick oxide (thickness between 1.8 nm and 2.8 nm) can be obtained. Low leakage devices with good performance and low off-current were obtained. Crystal defects formed after fluorine implantation resulted in an increased diode leakage current and a strongly enhanced 1/f noise.",

author = "Woerlee, {P. H.} and Knitel, {M. J.} and Meyssen, {V. M.H.} and Velghe, {R. M.D.A.} and {Zegers van Duijnhoven}, A.T.A.",

year = "2001",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2001.195212",

language = "English",

isbn = "2914601018",

pages = "107--110",

editor = "Heiner Ryssel and Gerhard Wachutka and Herbert Grunbacher",

booktitle = "European Solid-State Device Research Conference",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "31st European Solid-State Device Research Conference, ESSDERC 2001 ; Conference date: 11-09-2001 Through 13-09-2001",

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Woerlee, PH, Knitel, MJ, Meyssen, VMH, Velghe, RMDA & Zegers van Duijnhoven, ATA 2001, Multiple gate oxide technology using fluorine implantation. in H Ryssel, G Wachutka & H Grunbacher (eds), European Solid-State Device Research Conference. Institute of Electrical and Electronics Engineers, Piscataway, pp. 107-110, 31st European Solid-State Device Research Conference, ESSDERC 2001, Nuremberg, Germany, 11/09/01. https://doi.org/10.1109/ESSDERC.2001.195212

Multiple gate oxide technology using fluorine implantation. / Woerlee, P. H.; Knitel, M. J.; Meyssen, V. M.H. et al.

European Solid-State Device Research Conference. ed. / Heiner Ryssel; Gerhard Wachutka; Herbert Grunbacher. Piscataway : Institute of Electrical and Electronics Engineers, 2001. p. 107-110.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Multiple gate oxide technology using fluorine implantation

AU - Woerlee, P. H.

AU - Knitel, M. J.

AU - Meyssen, V. M.H.

AU - Velghe, R. M.D.A.

AU - Zegers van Duijnhoven, A.T.A.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Fluorine implantation prior to gate oxide growth was used for a multiple gate oxide thickness CMOS technology. With one oxidation step both a thin and thick oxide (thickness between 1.8 nm and 2.8 nm) can be obtained. Low leakage devices with good performance and low off-current were obtained. Crystal defects formed after fluorine implantation resulted in an increased diode leakage current and a strongly enhanced 1/f noise.

AB - Fluorine implantation prior to gate oxide growth was used for a multiple gate oxide thickness CMOS technology. With one oxidation step both a thin and thick oxide (thickness between 1.8 nm and 2.8 nm) can be obtained. Low leakage devices with good performance and low off-current were obtained. Crystal defects formed after fluorine implantation resulted in an increased diode leakage current and a strongly enhanced 1/f noise.

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DO - 10.1109/ESSDERC.2001.195212

M3 - Conference contribution

AN - SCOPUS:84907501500

SN - 2914601018

SP - 107

EP - 110

BT - European Solid-State Device Research Conference

A2 - Ryssel, Heiner

A2 - Wachutka, Gerhard

A2 - Grunbacher, Herbert

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 31st European Solid-State Device Research Conference, ESSDERC 2001

Y2 - 11 September 2001 through 13 September 2001

ER -

Multiple gate oxide technology using fluorine implantation

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