In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed
Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The power is out coupled from the cavity using a side diffraction order of the AWG. Simultaneous laser operation is provided for four wavelengths/cavities in the device. The termination of the laser cavities with integrated Sagnac loop reflectors avoids using high reflection coating. Only anti-reflection coating is used in the output facet of the chip.
|Title of host publication||Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 6-9, 2010, Cambridge, United Kingdom|
|Place of Publication||Berlin|
|Publication status||Published - 2010|