Multi-scale analysis of solder interconnects in micro-electronics

M.G.D. Geers, M.E. Erinc, M.A. Matin

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Considerable scientific efforts were made in the past decade, to come up with reliable and predictive analyses for lead-free solder interconnects, in view of their obligatory introduction a few years ago. This paper concentrates on a number of physical, computational and experimental multi-scale aspects, based on the analyses of the instabilities that occur in a Sn-Ag-Cu (SAC) alloy. Particular attention is given on the most dominant interfacial damage mechanisms and related numerical methods that enable life time predictions in thermo-mechanical cycling.
Original languageEnglish
Title of host publicationEuroSimE 2009 : 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems; Delft, the Netherlands
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1-6
ISBN (Print)9781-424441617
DOIs
Publication statusPublished - 2009
Event10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSimE 2009) - Delft, Netherlands
Duration: 26 Apr 200929 Apr 2009
Conference number: 10
http://www.eurosime.org/b09.htm

Conference

Conference10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSimE 2009)
Abbreviated titleEuroSimE 2009
CountryNetherlands
CityDelft
Period26/04/0929/04/09
Internet address

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    Geers, M. G. D., Erinc, M. E., & Matin, M. A. (2009). Multi-scale analysis of solder interconnects in micro-electronics. In EuroSimE 2009 : 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems; Delft, the Netherlands (pp. 1-6). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ESIME.2009.4938515