Multi-level nanoimprint lithography for large-area thin film transistor backplane manufacturing

Tamer Dogan; Joris de Riet; Thijs Bel; Roy Verbeek; Ilias Katsouras; Eric Meulenkamp; Gerwin Gelinck; Auke Jisk Kronemeijer

doi:10.2494/photopolymer.33.241

Multi-level nanoimprint lithography for large-area thin film transistor backplane manufacturing

Tamer Dogan
, Joris de Riet
, Thijs Bel
, Roy Verbeek
, Ilias Katsouras
, Eric Meulenkamp
, Gerwin Gelinck
, Auke Jisk Kronemeijer (Corresponding author)

Research output: Contribution to journal › Article › Academic › peer-review

5 Citations (Scopus)

Abstract

Thin film transistors (TFTs) are the basis for current AMOLED display arrays. For next-generation displays, higher resolution and cost-effective manufacturing of panels is adamant. The current benchmark patterning method in the display industry is photolithography. Here, we propose the use of a hybrid approach of nanoimprint lithography and conventional FPD processing for the realization of high-resolution display backplanes. We demonstrate the realization of sub-micron amorphous oxide semiconductor TFTs with multi-level nanoimprint lithography in order to decrease the number of patterning steps in display manufacturing. Top-gate self-aligned a-IGZO TFTs are realized with performance comparable to benchmark photolithography-based TFTs.

Original language	English
Pages (from-to)	241-244
Number of pages	4
Journal	Journal of Photopolymer Science and Technology
Volume	33
Issue number	2
DOIs	https://doi.org/10.2494/photopolymer.33.241
Publication status	Published - 1 Jul 2020

Funding

This work is financed through the Flexlines project within the Interreg V-programme Flanders-The Netherlands, a cross-border cooperation programme with financial support from the European Regional Development Fund, and co- financed by the Province of Noord-Brabant, The Netherlands, and King Abdullah University of Science and Technology (KAUST) OSR-CRF CRG funding.

Keywords

A-IGZO TFT
AMOLED
Multi-level nanoimprint lithography

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10.2494/photopolymer.33.241

Cite this

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abstract = "Thin film transistors (TFTs) are the basis for current AMOLED display arrays. For next-generation displays, higher resolution and cost-effective manufacturing of panels is adamant. The current benchmark patterning method in the display industry is photolithography. Here, we propose the use of a hybrid approach of nanoimprint lithography and conventional FPD processing for the realization of high-resolution display backplanes. We demonstrate the realization of sub-micron amorphous oxide semiconductor TFTs with multi-level nanoimprint lithography in order to decrease the number of patterning steps in display manufacturing. Top-gate self-aligned a-IGZO TFTs are realized with performance comparable to benchmark photolithography-based TFTs.",

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AU - Katsouras, Ilias

AU - Meulenkamp, Eric

AU - Gelinck, Gerwin

AU - Kronemeijer, Auke Jisk

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Multi-level nanoimprint lithography for large-area thin film transistor backplane manufacturing

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