Abstract
Thin film transistors (TFTs) are the basis for current AMOLED display arrays. For next-generation displays, higher resolution and cost-effective manufacturing of panels is adamant. The current benchmark patterning method in the display industry is photolithography. Here, we propose the use of a hybrid approach of nanoimprint lithography and conventional FPD processing for the realization of high-resolution display backplanes. We demonstrate the realization of sub-micron amorphous oxide semiconductor TFTs with multi-level nanoimprint lithography in order to decrease the number of patterning steps in display manufacturing. Top-gate self-aligned a-IGZO TFTs are realized with performance comparable to benchmark photolithography-based TFTs.
Original language | English |
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Pages (from-to) | 241-244 |
Number of pages | 4 |
Journal | Journal of Photopolymer Science and Technology |
Volume | 33 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Jul 2020 |
Funding
This work is financed through the Flexlines project within the Interreg V-programme Flanders-The Netherlands, a cross-border cooperation programme with financial support from the European Regional Development Fund, and co- financed by the Province of Noord-Brabant, The Netherlands, and King Abdullah University of Science and Technology (KAUST) OSR-CRF CRG funding.
Keywords
- A-IGZO TFT
- AMOLED
- Multi-level nanoimprint lithography