Abstract
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium |
| Editors | F. Berghmans, H. Thienpont, J. Danckaert, L. Desmet |
| Place of Publication | Brussels, Belgium |
| Publisher | IEEE/LEOS |
| Pages | 245-249 |
| ISBN (Print) | 90-5487247-0 |
| Publication status | Published - 2001 |
| Event | 6th Annual Symposium of the IEEE/LEOS Benelux Chapter - Brussels, Belgium Duration: 3 Dec 2001 → 3 Dec 2001 Conference number: 6 |
Conference
| Conference | 6th Annual Symposium of the IEEE/LEOS Benelux Chapter |
|---|---|
| Country | Belgium |
| City | Brussels |
| Period | 3/12/01 → 3/12/01 |
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MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss. / Binsma, J.J.M.; Geemert, van, M.; Heinrichsdorff, F.; Dongen, van, T.; Broeke, R.G.; Bente, E.A.J.M.; Smit, M.K.
Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium. ed. / F. Berghmans; H. Thienpont; J. Danckaert; L. Desmet. Brussels, Belgium : IEEE/LEOS, 2001. p. 245-249.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss
AU - Binsma, J.J.M.
AU - Geemert, van, M.
AU - Heinrichsdorff, F.
AU - Dongen, van, T.
AU - Broeke, R.G.
AU - Bente, E.A.J.M.
AU - Smit, M.K.
PY - 2001
Y1 - 2001
N2 - InP photonic circuits are becoming increasingly complex and require different layer-stacks for different applications like interconnecting, switching or amplification. This integration requires epitaxial regrowth steps of different waveguide material-compositions with low butt-joint loss. In this paper we present experiments with transparant InGaAsP/InP waveguides which were grown using a two step MOVPE process. The propagation loss in the waveguides which were grown in the first step and in the second step showed no significant difference. In addition, the loss in the butt-joints between the two materials was below 0.1 dB.
AB - InP photonic circuits are becoming increasingly complex and require different layer-stacks for different applications like interconnecting, switching or amplification. This integration requires epitaxial regrowth steps of different waveguide material-compositions with low butt-joint loss. In this paper we present experiments with transparant InGaAsP/InP waveguides which were grown using a two step MOVPE process. The propagation loss in the waveguides which were grown in the first step and in the second step showed no significant difference. In addition, the loss in the butt-joints between the two materials was below 0.1 dB.
M3 - Conference contribution
SN - 90-5487247-0
SP - 245
EP - 249
BT - Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium
A2 - Berghmans, F.
A2 - Thienpont, H.
A2 - Danckaert, J.
A2 - Desmet, L.
PB - IEEE/LEOS
CY - Brussels, Belgium
ER -