MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss

J.J.M. Binsma; M. Geemert, van; F. Heinrichsdorff; T. Dongen, van; R.G. Broeke; E.A.J.M. Bente; M.K. Smit

MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss

J.J.M. Binsma, M. Geemert, van, F. Heinrichsdorff, T. Dongen, van, R.G. Broeke, E.A.J.M. Bente, M.K. Smit

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

InP photonic circuits are becoming increasingly complex and require different layer-stacks for different applications like interconnecting, switching or amplification. This integration requires epitaxial regrowth steps of different waveguide material-compositions with low butt-joint loss. In this paper we present experiments with transparant InGaAsP/InP waveguides which were grown using a two step MOVPE process. The propagation loss in the waveguides which were grown in the first step and in the second step showed no significant difference. In addition, the loss in the butt-joints between the two materials was below 0.1 dB.

Original language	English
Title of host publication	Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium
Editors	F. Berghmans, H. Thienpont, J. Danckaert, L. Desmet
Place of Publication	Brussels, Belgium
Publisher	IEEE/LEOS
Pages	245-249
ISBN (Print)	90-5487247-0
Publication status	Published - 2001
Event	6th Annual Symposium of the IEEE/LEOS Benelux Chapter - Brussels, Belgium Duration: 3 Dec 2001 → 3 Dec 2001 Conference number: 6

Conference

Conference	6th Annual Symposium of the IEEE/LEOS Benelux Chapter
Country/Territory	Belgium
City	Brussels
Period	3/12/01 → 3/12/01

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Binsma, J. J. M., Geemert, van, M., Heinrichsdorff, F., Dongen, van, T., Broeke, R. G., Bente, E. A. J. M., & Smit, M. K. (2001). MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss. In F. Berghmans, H. Thienpont, J. Danckaert, & L. Desmet (Eds.), Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium (pp. 245-249). IEEE/LEOS.

Binsma, J.J.M. ; Geemert, van, M. ; Heinrichsdorff, F. ; Dongen, van, T. ; Broeke, R.G. ; Bente, E.A.J.M. ; Smit, M.K. / MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss. Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium. editor / F. Berghmans ; H. Thienpont ; J. Danckaert ; L. Desmet. Brussels, Belgium : IEEE/LEOS, 2001. pp. 245-249

@inproceedings{6894447a6aef4edba6fe4c0ed860f1f2,

title = "MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss",

abstract = "InP photonic circuits are becoming increasingly complex and require different layer-stacks for different applications like interconnecting, switching or amplification. This integration requires epitaxial regrowth steps of different waveguide material-compositions with low butt-joint loss. In this paper we present experiments with transparant InGaAsP/InP waveguides which were grown using a two step MOVPE process. The propagation loss in the waveguides which were grown in the first step and in the second step showed no significant difference. In addition, the loss in the butt-joints between the two materials was below 0.1 dB.",

author = "J.J.M. Binsma and {Geemert, van}, M. and F. Heinrichsdorff and {Dongen, van}, T. and R.G. Broeke and E.A.J.M. Bente and M.K. Smit",

year = "2001",

language = "English",

isbn = "90-5487247-0",

pages = "245--249",

editor = "F. Berghmans and H. Thienpont and J. Danckaert and L. Desmet",

booktitle = "Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium",

publisher = "IEEE/LEOS",

note = "6th Annual Symposium of the IEEE/LEOS Benelux Chapter ; Conference date: 03-12-2001 Through 03-12-2001",

}

Binsma, JJM, Geemert, van, M, Heinrichsdorff, F, Dongen, van, T, Broeke, RG, Bente, EAJM & Smit, MK 2001, MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss. in F Berghmans, H Thienpont, J Danckaert & L Desmet (eds), Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium. IEEE/LEOS, Brussels, Belgium, pp. 245-249, 6th Annual Symposium of the IEEE/LEOS Benelux Chapter, Brussels, Belgium, 3/12/01.

MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss. / Binsma, J.J.M.; Geemert, van, M.; Heinrichsdorff, F.; Dongen, van, T.; Broeke, R.G.; Bente, E.A.J.M.; Smit, M.K.

Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium. ed. / F. Berghmans; H. Thienpont; J. Danckaert; L. Desmet. Brussels, Belgium : IEEE/LEOS, 2001. p. 245-249.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss

AU - Binsma, J.J.M.

AU - Geemert, van, M.

AU - Heinrichsdorff, F.

AU - Dongen, van, T.

AU - Broeke, R.G.

AU - Bente, E.A.J.M.

AU - Smit, M.K.

N1 - Conference code: 6

PY - 2001

Y1 - 2001

N2 - InP photonic circuits are becoming increasingly complex and require different layer-stacks for different applications like interconnecting, switching or amplification. This integration requires epitaxial regrowth steps of different waveguide material-compositions with low butt-joint loss. In this paper we present experiments with transparant InGaAsP/InP waveguides which were grown using a two step MOVPE process. The propagation loss in the waveguides which were grown in the first step and in the second step showed no significant difference. In addition, the loss in the butt-joints between the two materials was below 0.1 dB.

AB - InP photonic circuits are becoming increasingly complex and require different layer-stacks for different applications like interconnecting, switching or amplification. This integration requires epitaxial regrowth steps of different waveguide material-compositions with low butt-joint loss. In this paper we present experiments with transparant InGaAsP/InP waveguides which were grown using a two step MOVPE process. The propagation loss in the waveguides which were grown in the first step and in the second step showed no significant difference. In addition, the loss in the butt-joints between the two materials was below 0.1 dB.

M3 - Conference contribution

SN - 90-5487247-0

SP - 245

EP - 249

BT - Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium

A2 - Berghmans, F.

A2 - Thienpont, H.

A2 - Danckaert, J.

A2 - Desmet, L.

PB - IEEE/LEOS

CY - Brussels, Belgium

T2 - 6th Annual Symposium of the IEEE/LEOS Benelux Chapter

Y2 - 3 December 2001 through 3 December 2001

ER -

Binsma JJM, Geemert, van M, Heinrichsdorff F, Dongen, van T, Broeke RG, Bente EAJM et al. MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss. In Berghmans F, Thienpont H, Danckaert J, Desmet L, editors, Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium. Brussels, Belgium: IEEE/LEOS. 2001. p. 245-249

MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss

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