MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss

J.J.M. Binsma, M. Geemert, van, F. Heinrichsdorff, T. Dongen, van, R.G. Broeke, E.A.J.M. Bente, M.K. Smit

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Abstract

InP photonic circuits are becoming increasingly complex and require different layer-stacks for different applications like interconnecting, switching or amplification. This integration requires epitaxial regrowth steps of different waveguide material-compositions with low butt-joint loss. In this paper we present experiments with transparant InGaAsP/InP waveguides which were grown using a two step MOVPE process. The propagation loss in the waveguides which were grown in the first step and in the second step showed no significant difference. In addition, the loss in the butt-joints between the two materials was below 0.1 dB.
Original languageEnglish
Title of host publicationProceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium
EditorsF. Berghmans, H. Thienpont, J. Danckaert, L. Desmet
Place of PublicationBrussels, Belgium
PublisherIEEE/LEOS
Pages245-249
ISBN (Print)90-5487247-0
Publication statusPublished - 2001
Event6th Annual Symposium of the IEEE/LEOS Benelux Chapter - Brussels, Belgium
Duration: 3 Dec 20013 Dec 2001
Conference number: 6

Conference

Conference6th Annual Symposium of the IEEE/LEOS Benelux Chapter
CountryBelgium
CityBrussels
Period3/12/013/12/01

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