Abstract
InP photonic circuits are becoming increasingly complex and require different layer-stacks for
different applications like interconnecting, switching or amplification. This integration requires
epitaxial regrowth steps of different waveguide material-compositions with low butt-joint loss.
In this paper we present experiments with transparant InGaAsP/InP waveguides which were
grown using a two step MOVPE process. The propagation loss in the waveguides which were
grown in the first step and in the second step showed no significant difference. In addition, the
loss in the butt-joints between the two materials was below 0.1 dB.
Original language | English |
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Title of host publication | Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium |
Editors | F. Berghmans, H. Thienpont, J. Danckaert, L. Desmet |
Place of Publication | Brussels, Belgium |
Publisher | IEEE/LEOS |
Pages | 245-249 |
ISBN (Print) | 90-5487247-0 |
Publication status | Published - 2001 |
Event | 6th Annual Symposium of the IEEE/LEOS Benelux Chapter - Brussels, Belgium Duration: 3 Dec 2001 → 3 Dec 2001 Conference number: 6 |
Conference
Conference | 6th Annual Symposium of the IEEE/LEOS Benelux Chapter |
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Country/Territory | Belgium |
City | Brussels |
Period | 3/12/01 → 3/12/01 |