Monte Carlo simulation of MBE growth of GaAs analysis of RHEED

P.J. Hall, van; H. Kokten; M.R. Leijs; M. Bosch

Monte Carlo simulation of MBE growth of GaAs analysis of RHEED

P.J. Hall, van, H. Kokten, M.R. Leijs, M. Bosch

Applied Physics and Science Education

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

Modern optoelectronic devices such as quantum well lasers contain thin layers (20-100 Å) of different semiconductor materials. Mostly one uses III-V compound semiconductors for example GaAs, AlGaAs, InP, InGaAs etc. These structures are grown using MOCVD, MBE or CBE growth technologies1. All these techniques have in common that one operates under a large excess of group V elements, which serves to stabilize the surface.

Original language	English
Title of host publication	Stability of Materials
Subtitle of host publication	Proceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece
Editors	A. Gonis, P.E.A. Turchi, J. Kudrnosvky
Place of Publication	New York
Publisher	Plenum Press
Chapter	16
Pages	229-234
ISBN (Electronic)	978-1-4613-0385-5
ISBN (Print)	978-1-4613-8028-3
Publication status	Published - 1996

Publication series

Name	NATO ASI series. Series B, Physics
Volume	325
ISSN (Print)	0258-1221

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Hall, van, P. J., Kokten, H., Leijs, M. R., & Bosch, M. (1996). Monte Carlo simulation of MBE growth of GaAs analysis of RHEED. In A. Gonis, P. E. A. Turchi, & J. Kudrnosvky (Eds.), Stability of Materials: Proceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece (pp. 229-234). (NATO ASI series. Series B, Physics; Vol. 325). Plenum Press.

Hall, van, P.J. ; Kokten, H. ; Leijs, M.R. et al. / Monte Carlo simulation of MBE growth of GaAs analysis of RHEED. Stability of Materials: Proceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece. editor / A. Gonis ; P.E.A. Turchi ; J. Kudrnosvky. New York : Plenum Press, 1996. pp. 229-234 (NATO ASI series. Series B, Physics).

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title = "Monte Carlo simulation of MBE growth of GaAs analysis of RHEED",

abstract = "Modern optoelectronic devices such as quantum well lasers contain thin layers (20-100 {\AA}) of different semiconductor materials. Mostly one uses III-V compound semiconductors for example GaAs, AlGaAs, InP, InGaAs etc. These structures are grown using MOCVD, MBE or CBE growth technologies1. All these techniques have in common that one operates under a large excess of group V elements, which serves to stabilize the surface.",

author = "{Hall, van}, P.J. and H. Kokten and M.R. Leijs and M. Bosch",

year = "1996",

language = "English",

isbn = "978-1-4613-8028-3",

series = "NATO ASI series. Series B, Physics",

publisher = "Plenum Press",

pages = "229--234",

editor = "A. Gonis and P.E.A. Turchi and J. Kudrnosvky",

booktitle = "Stability of Materials",

address = "United States",

}

Hall, van, PJ, Kokten, H, Leijs, MR & Bosch, M 1996, Monte Carlo simulation of MBE growth of GaAs analysis of RHEED. in A Gonis, PEA Turchi & J Kudrnosvky (eds), Stability of Materials: Proceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece. NATO ASI series. Series B, Physics, vol. 325, Plenum Press, New York, pp. 229-234.

Monte Carlo simulation of MBE growth of GaAs analysis of RHEED. / Hall, van, P.J.; Kokten, H.; Leijs, M.R. et al.
Stability of Materials: Proceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece. ed. / A. Gonis; P.E.A. Turchi; J. Kudrnosvky. New York: Plenum Press, 1996. p. 229-234 (NATO ASI series. Series B, Physics; Vol. 325).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Monte Carlo simulation of MBE growth of GaAs analysis of RHEED

AU - Hall, van, P.J.

AU - Kokten, H.

AU - Leijs, M.R.

AU - Bosch, M.

PY - 1996

Y1 - 1996

N2 - Modern optoelectronic devices such as quantum well lasers contain thin layers (20-100 Å) of different semiconductor materials. Mostly one uses III-V compound semiconductors for example GaAs, AlGaAs, InP, InGaAs etc. These structures are grown using MOCVD, MBE or CBE growth technologies1. All these techniques have in common that one operates under a large excess of group V elements, which serves to stabilize the surface.

AB - Modern optoelectronic devices such as quantum well lasers contain thin layers (20-100 Å) of different semiconductor materials. Mostly one uses III-V compound semiconductors for example GaAs, AlGaAs, InP, InGaAs etc. These structures are grown using MOCVD, MBE or CBE growth technologies1. All these techniques have in common that one operates under a large excess of group V elements, which serves to stabilize the surface.

M3 - Conference contribution

SN - 978-1-4613-8028-3

T3 - NATO ASI series. Series B, Physics

SP - 229

EP - 234

BT - Stability of Materials

A2 - Gonis, A.

A2 - Turchi, P.E.A.

A2 - Kudrnosvky, J.

PB - Plenum Press

CY - New York

ER -

Hall, van PJ, Kokten H, Leijs MR, Bosch M. Monte Carlo simulation of MBE growth of GaAs analysis of RHEED. In Gonis A, Turchi PEA, Kudrnosvky J, editors, Stability of Materials: Proceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece. New York: Plenum Press. 1996. p. 229-234. (NATO ASI series. Series B, Physics).

Monte Carlo simulation of MBE growth of GaAs analysis of RHEED

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