Monte Carlo simulation of MBE growth of GaAs analysis of RHEED

P.J. Hall, van, H. Kokten, M.R. Leijs, M. Bosch

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Abstract

Modern optoelectronic devices such as quantum well lasers contain thin layers (20-100 Å) of different semiconductor materials. Mostly one uses III-V compound semiconductors for example GaAs, AlGaAs, InP, InGaAs etc. These structures are grown using MOCVD, MBE or CBE growth technologies1. All these techniques have in common that one operates under a large excess of group V elements, which serves to stabilize the surface.
Original languageEnglish
Title of host publicationStability of Materials
Subtitle of host publicationProceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece
EditorsA. Gonis, P.E.A. Turchi, J. Kudrnosvky
Place of PublicationNew York
PublisherPlenum Press
Pages229-234
ISBN (Electronic)978-1-4613-0385-5
ISBN (Print)978-1-4613-8028-3
DOIs
Publication statusPublished - 1996

Publication series

NameNATO ASI series. Series B, Physics
Volume325
ISSN (Print)0258-1221

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