Modern optoelectronic devices such as quantum well lasers contain thin layers (20-100 Å) of different semiconductor materials. Mostly one uses III-V compound semiconductors for example GaAs, AlGaAs, InP, InGaAs etc. These structures are grown using MOCVD, MBE or CBE growth technologies1. All these techniques have in common that one operates under a large excess of group V elements, which serves to stabilize the surface.
|Title of host publication||Stability of Materials|
|Subtitle of host publication||Proceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece|
|Editors||A. Gonis, P.E.A. Turchi, J. Kudrnosvky|
|Place of Publication||New York|
|Publication status||Published - 1996|
|Name||NATO ASI series. Series B, Physics|