Monte Carlo simulation of MBE growth of GaAs analysis of RHEED

P.J. Hall, van, H. Kokten, M.R. Leijs, M. Bosch

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Abstract

Modern optoelectronic devices such as quantum well lasers contain thin layers (20-100 Å) of different semiconductor materials. Mostly one uses III-V compound semiconductors for example GaAs, AlGaAs, InP, InGaAs etc. These structures are grown using MOCVD, MBE or CBE growth technologies1. All these techniques have in common that one operates under a large excess of group V elements, which serves to stabilize the surface.
Original languageEnglish
Title of host publicationStability of Materials
Subtitle of host publicationProceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece
EditorsA. Gonis, P.E.A. Turchi, J. Kudrnosvky
Place of PublicationNew York
PublisherPlenum Press
Pages229-234
ISBN (Electronic)978-1-4613-0385-5
ISBN (Print)978-1-4613-8028-3
DOIs
Publication statusPublished - 1996

Publication series

NameNATO ASI series. Series B, Physics
Volume325
ISSN (Print)0258-1221

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quantum well lasers
optoelectronic devices
metalorganic chemical vapor deposition
aluminum gallium arsenides
simulation

Cite this

Hall, van, P. J., Kokten, H., Leijs, M. R., & Bosch, M. (1996). Monte Carlo simulation of MBE growth of GaAs analysis of RHEED. In A. Gonis, P. E. A. Turchi, & J. Kudrnosvky (Eds.), Stability of Materials: Proceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece (pp. 229-234). (NATO ASI series. Series B, Physics; Vol. 325). New York: Plenum Press. https://doi.org/10.1007/978-1-4613-0385-5_16
Hall, van, P.J. ; Kokten, H. ; Leijs, M.R. ; Bosch, M. / Monte Carlo simulation of MBE growth of GaAs analysis of RHEED. Stability of Materials: Proceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece. editor / A. Gonis ; P.E.A. Turchi ; J. Kudrnosvky. New York : Plenum Press, 1996. pp. 229-234 (NATO ASI series. Series B, Physics).
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abstract = "Modern optoelectronic devices such as quantum well lasers contain thin layers (20-100 {\AA}) of different semiconductor materials. Mostly one uses III-V compound semiconductors for example GaAs, AlGaAs, InP, InGaAs etc. These structures are grown using MOCVD, MBE or CBE growth technologies1. All these techniques have in common that one operates under a large excess of group V elements, which serves to stabilize the surface.",
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Hall, van, PJ, Kokten, H, Leijs, MR & Bosch, M 1996, Monte Carlo simulation of MBE growth of GaAs analysis of RHEED. in A Gonis, PEA Turchi & J Kudrnosvky (eds), Stability of Materials: Proceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece. NATO ASI series. Series B, Physics, vol. 325, Plenum Press, New York, pp. 229-234. https://doi.org/10.1007/978-1-4613-0385-5_16

Monte Carlo simulation of MBE growth of GaAs analysis of RHEED. / Hall, van, P.J.; Kokten, H.; Leijs, M.R.; Bosch, M.

Stability of Materials: Proceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece. ed. / A. Gonis; P.E.A. Turchi; J. Kudrnosvky. New York : Plenum Press, 1996. p. 229-234 (NATO ASI series. Series B, Physics; Vol. 325).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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Hall, van PJ, Kokten H, Leijs MR, Bosch M. Monte Carlo simulation of MBE growth of GaAs analysis of RHEED. In Gonis A, Turchi PEA, Kudrnosvky J, editors, Stability of Materials: Proceedings of a NATO Advanced Study Institute on Stability of Materials, held June 25 - July 7, 1994, in Corfu, Greece. New York: Plenum Press. 1996. p. 229-234. (NATO ASI series. Series B, Physics). https://doi.org/10.1007/978-1-4613-0385-5_16