Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications

Jasper de Graaf; Dimitrios Konstantinou; Simon Rommel; Kevin A. Williams; Idelfonso Tafur Monroy; Yuqing Jiao

doi:10.1109/OECC56963.2023.10209767

Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications

Jasper de Graaf, Dimitrios Konstantinou, Simon Rommel, Kevin A. Williams, Idelfonso Tafur Monroy, Yuqing Jiao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

This work reports on the first monolithic integration of a planar bias circuit directly integrated with a uni-traveling carrier photodetector in an InP membrane platform. The bias circuit is optimized for V-band using first order approximations and numerical optimizations. Simulations demonstrate transmission loss below -3 dB and RF to DC isolation of at least 15dB for a frequency range of 20GHz around the center of the V-band. Fabricated integrated devices show external responsivities up to 0.035A/W with measured RF to DC isolation of at least 25dB between 40GHz to 65GHz.

Original language	English
Title of host publication	2023 Opto-Electronics and Communications Conference (OECC)
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	3
ISBN (Electronic)	978-1-6654-6213-6
DOIs	https://doi.org/10.1109/OECC56963.2023.10209767
Publication status	Published - 14 Aug 2023
Event	28th Opto-Electronics and Communications Conference (OECC 2023) - Shanghai, China Duration: 2 Jul 2023 → 6 Jul 2023 Conference number: 28 https://ieeexplore.ieee.org/xpl/conhome/10209604/proceeding

Conference

Conference	28th Opto-Electronics and Communications Conference (OECC 2023)
Abbreviated title	OECC 2023
Country/Territory	China
City	Shanghai
Period	2/07/23 → 6/07/23
Internet address	https://ieeexplore.ieee.org/xpl/conhome/10209604/proceeding

Keywords

UTC-PD
monolithic integration
V-band
beyond-5G
microwave photonics

Access to Document

10.1109/OECC56963.2023.10209767

pdfFinal published version, 918 KBLicence: TAVERNE

Cite this

@inproceedings{5f79e8135289480eb928227eced3afdc,

title = "Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications",

abstract = "This work reports on the first monolithic integration of a planar bias circuit directly integrated with a uni-traveling carrier photodetector in an InP membrane platform. The bias circuit is optimized for V-band using first order approximations and numerical optimizations. Simulations demonstrate transmission loss below -3 dB and RF to DC isolation of at least 15dB for a frequency range of 20GHz around the center of the V-band. Fabricated integrated devices show external responsivities up to 0.035A/W with measured RF to DC isolation of at least 25dB between 40GHz to 65GHz.",

keywords = "UTC-PD, monolithic integration, V-band, beyond-5G, microwave photonics",

author = "{de Graaf}, Jasper and Dimitrios Konstantinou and Simon Rommel and Williams, {Kevin A.} and {Tafur Monroy}, Idelfonso and Yuqing Jiao",

year = "2023",

month = aug,

day = "14",

doi = "10.1109/OECC56963.2023.10209767",

language = "English",

booktitle = "2023 Opto-Electronics and Communications Conference (OECC)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "28th Opto-Electronics and Communications Conference (OECC 2023), OECC 2023 ; Conference date: 02-07-2023 Through 06-07-2023",

url = "https://ieeexplore.ieee.org/xpl/conhome/10209604/proceeding",

}

de Graaf, J, Konstantinou, D, Rommel, S , Williams, KA , Tafur Monroy, I & Jiao, Y 2023, Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications. in 2023 Opto-Electronics and Communications Conference (OECC)., 10209767, Institute of Electrical and Electronics Engineers, 28th Opto-Electronics and Communications Conference (OECC 2023), Shanghai, China, 2/07/23. https://doi.org/10.1109/OECC56963.2023.10209767

Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications. / de Graaf, Jasper; Konstantinou, Dimitrios; Rommel, Simon et al.
2023 Opto-Electronics and Communications Conference (OECC). Institute of Electrical and Electronics Engineers, 2023. 10209767.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications

AU - de Graaf, Jasper

AU - Konstantinou, Dimitrios

AU - Rommel, Simon

AU - Williams, Kevin A.

AU - Tafur Monroy, Idelfonso

AU - Jiao, Yuqing

N1 - Conference code: 28

PY - 2023/8/14

Y1 - 2023/8/14

N2 - This work reports on the first monolithic integration of a planar bias circuit directly integrated with a uni-traveling carrier photodetector in an InP membrane platform. The bias circuit is optimized for V-band using first order approximations and numerical optimizations. Simulations demonstrate transmission loss below -3 dB and RF to DC isolation of at least 15dB for a frequency range of 20GHz around the center of the V-band. Fabricated integrated devices show external responsivities up to 0.035A/W with measured RF to DC isolation of at least 25dB between 40GHz to 65GHz.

AB - This work reports on the first monolithic integration of a planar bias circuit directly integrated with a uni-traveling carrier photodetector in an InP membrane platform. The bias circuit is optimized for V-band using first order approximations and numerical optimizations. Simulations demonstrate transmission loss below -3 dB and RF to DC isolation of at least 15dB for a frequency range of 20GHz around the center of the V-band. Fabricated integrated devices show external responsivities up to 0.035A/W with measured RF to DC isolation of at least 25dB between 40GHz to 65GHz.

KW - UTC-PD

KW - monolithic integration

KW - V-band

KW - beyond-5G

KW - microwave photonics

UR - http://www.scopus.com/inward/record.url?scp=85170245122&partnerID=8YFLogxK

U2 - 10.1109/OECC56963.2023.10209767

DO - 10.1109/OECC56963.2023.10209767

M3 - Conference contribution

BT - 2023 Opto-Electronics and Communications Conference (OECC)

PB - Institute of Electrical and Electronics Engineers

T2 - 28th Opto-Electronics and Communications Conference (OECC 2023)

Y2 - 2 July 2023 through 6 July 2023

ER -

Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications

Abstract

Conference

Keywords

Access to Document

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5G STEP FWD

Cite this

Monolithically integrated UTC-PD with an RF-Choke on InP for V-Band Communications

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Projects

5G STEP FWD

Cite this