Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

T. Van Caenegem; D. Van Thourhout; M. Galarza; S. Verstuyft; I. Moerman; P. Van Daele; R.G.F. Baets; P. Demeester; C.G.P. Herben; X.J.M. Leijtens; M.K. Smit

Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

T. Van Caenegem
, D. Van Thourhout
, M. Galarza
, S. Verstuyft
, I. Moerman
, P. Van Daele
, R.G.F. Baets
, P. Demeester
, C.G.P. Herben
, X.J.M. Leijtens
, M.K. Smit

Photonic Integration

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17 Citations (Scopus)

Abstract

A multiwavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and to the author' knowledge, is the first device of the kind realised with only two growth step making use of SAG MOVPE

Original language	English
Pages (from-to)	296-298
Journal	Electronics Letters
Volume	37
Issue number	5
Publication status	Published - 2001

Cite this

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title = "Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy",

abstract = "A multiwavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and to the author' knowledge, is the first device of the kind realised with only two growth step making use of SAG MOVPE",

author = "\{Van Caenegem\}, T. and \{Van Thourhout\}, D. and M. Galarza and S. Verstuyft and I. Moerman and \{Van Daele\}, P. and R.G.F. Baets and P. Demeester and C.G.P. Herben and X.J.M. Leijtens and M.K. Smit",

year = "2001",

language = "English",

volume = "37",

pages = "296--298",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Wiley",

number = "5",

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TY - JOUR

T1 - Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

AU - Van Caenegem, T.

AU - Van Thourhout, D.

AU - Galarza, M.

AU - Verstuyft, S.

AU - Moerman, I.

AU - Van Daele, P.

AU - Baets, R.G.F.

AU - Demeester, P.

AU - Herben, C.G.P.

AU - Leijtens, X.J.M.

AU - Smit, M.K.

PY - 2001

Y1 - 2001

N2 - A multiwavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and to the author' knowledge, is the first device of the kind realised with only two growth step making use of SAG MOVPE

AB - A multiwavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and to the author' knowledge, is the first device of the kind realised with only two growth step making use of SAG MOVPE

M3 - Article

SN - 0013-5194

VL - 37

SP - 296

EP - 298

JO - Electronics Letters

JF - Electronics Letters

IS - 5

ER -

Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

Abstract

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