Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

T. Van Caenegem, D. Van Thourhout, M. Galarza, S. Verstuyft, I. Moerman, P. Van Daele, R.G.F. Baets, P. Demeester, C.G.P. Herben, X.J.M. Leijtens, M.K. Smit

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Abstract

A multiwavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and to the author' knowledge, is the first device of the kind realised with only two growth step making use of SAG MOVPE
Original languageEnglish
Pages (from-to)296-298
JournalElectronics Letters
Volume37
Issue number5
Publication statusPublished - 2001

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Vapor phase epitaxy
Wavelength
Lasers
Metals

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Van Caenegem, T., Van Thourhout, D., Galarza, M., Verstuyft, S., Moerman, I., Van Daele, P., ... Smit, M. K. (2001). Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy. Electronics Letters, 37(5), 296-298.
Van Caenegem, T. ; Van Thourhout, D. ; Galarza, M. ; Verstuyft, S. ; Moerman, I. ; Van Daele, P. ; Baets, R.G.F. ; Demeester, P. ; Herben, C.G.P. ; Leijtens, X.J.M. ; Smit, M.K. / Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy. In: Electronics Letters. 2001 ; Vol. 37, No. 5. pp. 296-298.
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author = "{Van Caenegem}, T. and {Van Thourhout}, D. and M. Galarza and S. Verstuyft and I. Moerman and {Van Daele}, P. and R.G.F. Baets and P. Demeester and C.G.P. Herben and X.J.M. Leijtens and M.K. Smit",
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Van Caenegem, T, Van Thourhout, D, Galarza, M, Verstuyft, S, Moerman, I, Van Daele, P, Baets, RGF, Demeester, P, Herben, CGP, Leijtens, XJM & Smit, MK 2001, 'Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy', Electronics Letters, vol. 37, no. 5, pp. 296-298.

Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy. / Van Caenegem, T.; Van Thourhout, D.; Galarza, M.; Verstuyft, S.; Moerman, I.; Van Daele, P.; Baets, R.G.F.; Demeester, P.; Herben, C.G.P.; Leijtens, X.J.M.; Smit, M.K.

In: Electronics Letters, Vol. 37, No. 5, 2001, p. 296-298.

Research output: Contribution to journalArticlePopular

TY - JOUR

T1 - Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

AU - Van Caenegem, T.

AU - Van Thourhout, D.

AU - Galarza, M.

AU - Verstuyft, S.

AU - Moerman, I.

AU - Van Daele, P.

AU - Baets, R.G.F.

AU - Demeester, P.

AU - Herben, C.G.P.

AU - Leijtens, X.J.M.

AU - Smit, M.K.

PY - 2001

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AB - A multiwavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and to the author' knowledge, is the first device of the kind realised with only two growth step making use of SAG MOVPE

M3 - Article

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SP - 296

EP - 298

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

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Van Caenegem T, Van Thourhout D, Galarza M, Verstuyft S, Moerman I, Van Daele P et al. Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy. Electronics Letters. 2001;37(5):296-298.