Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

T. Van Caenegem; D. Van Thourhout; M. Galarza; S. Verstuyft; I. Moerman; P. Van Daele; R.G.F. Baets; P. Demeester; C.G.P. Herben; X.J.M. Leijtens; M.K. Smit

Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

T. Van Caenegem, D. Van Thourhout, M. Galarza, S. Verstuyft, I. Moerman, P. Van Daele, R.G.F. Baets, P. Demeester, C.G.P. Herben, X.J.M. Leijtens, M.K. Smit

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Abstract

A multiwavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and to the author' knowledge, is the first device of the kind realised with only two growth step making use of SAG MOVPE

Original language	English
Pages (from-to)	296-298
Journal	Electronics Letters
Volume	37
Issue number	5
Publication status	Published - 2001

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@article{539f1aa4cb154c2bb295a4ad7c6393ab,

title = "Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy",

abstract = "A multiwavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and to the author' knowledge, is the first device of the kind realised with only two growth step making use of SAG MOVPE",

author = "{Van Caenegem}, T. and {Van Thourhout}, D. and M. Galarza and S. Verstuyft and I. Moerman and {Van Daele}, P. and R.G.F. Baets and P. Demeester and C.G.P. Herben and X.J.M. Leijtens and M.K. Smit",

year = "2001",

language = "English",

volume = "37",

pages = "296--298",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Wiley",

number = "5",

}

TY - JOUR

T1 - Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

AU - Van Caenegem, T.

AU - Van Thourhout, D.

AU - Galarza, M.

AU - Verstuyft, S.

AU - Moerman, I.

AU - Van Daele, P.

AU - Baets, R.G.F.

AU - Demeester, P.

AU - Herben, C.G.P.

AU - Leijtens, X.J.M.

AU - Smit, M.K.

PY - 2001

Y1 - 2001

N2 - A multiwavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and to the author' knowledge, is the first device of the kind realised with only two growth step making use of SAG MOVPE

AB - A multiwavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and to the author' knowledge, is the first device of the kind realised with only two growth step making use of SAG MOVPE

M3 - Article

SN - 0013-5194

VL - 37

SP - 296

EP - 298

JO - Electronics Letters

JF - Electronics Letters

IS - 5

ER -

Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

Abstract

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