Monolithically integrated laser sources for applications beyond telecommunications

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Abstract

Photonic integration technologies allow for fabrication of on-chip laser sources and systems that provide functionalities for applications beyond telecommunications, such as sensing, healthcare, millimeter and terahertz generation and quantum technologies. New applications impose a different range of demands regarding performance of such semiconductor laser sources. All characteristics of the optical output signal, output power, wavelength tuning range and mechanism, long and short term stability as well as the energy footprint have to be considered. Monolithic integration technologies on indium phosphide substrates natively support an on-chip combination of active and passive functions that enable development of a new class semiconductor lasers with complex cavities. Such lasers can be tailored to achieve optimum performance with respect to a specific application. A number of single frequency, tunable laser sources in form of photonic integrated circuits for applications in gas sensing, optical coherence tomography, millimeter and terahertz generation and quantum applications have been developed at Eindhoven University of Technology. Ongoing research and development activities that address challenges related to addressable wavelength bands, wavelength tuning and stability imposed by specific applications are enabled by mature generic monolithic technology on indium phosphide. In parallel to those efforts, extensive research works towards expansion of accessible wavelength bands. Tunable and mode-locked leaser geometries and challenges related to unique performance expectations are presented.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XXVIII
Subtitle of host publicationPhotonics West 2020
EditorsBernd Witzigmann, Marek Osinski, Yasuhiko Arakawa
PublisherSPIE
Number of pages9
ISBN (Electronic)9781510633117
DOIs
Publication statusPublished - 2020
EventPhysics and Simulation of Optoelectronic Devices XXVIII - San Francisco, United States
Duration: 3 Feb 20206 Feb 2020

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11274
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferencePhysics and Simulation of Optoelectronic Devices XXVIII
Country/TerritoryUnited States
CitySan Francisco
Period3/02/206/02/20

Funding

We would like to express our gratitude to all PhD candidates and postdocs whose contributions were included in this manuscript, the Photon Delta organization for stimulating the integrated photonics ecosystem in Netherlands, SMART Photonics for fabricating the devices in MPW runs, Effect Photonics and nanolab@ TU/e for their dedication to development of the long-wavelengths photonic integration technology on indium phosphide. Moreover, the authors would like to acknowledge the following founding agencies and programs for support of the presented work: EU FP7 Integrated Project Paradigm, Stichting voor de Technische Wetenschappen (STW) projects LWAVETECH, ISLASENS, Integrated FTS and Memphis II project ‘Chip-based optical frequency combs’, IOP Photonic Devices project TULGAS, the Netherlands organization for scientific research (NWO) under the grant 13930 and the United States Air Force Office of Scientific Research (AFOSR) for the grant FA9550-18-1-0015, European Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement No. 721766.

Keywords

  • lasers
  • mode-locked lasers
  • photonic integrated circuits
  • Photonic integration
  • semiconductor lasers
  • sensing
  • tunable lasers

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