Monolithic transformers for high frequency bulk CMOS circuits

H.M. Cheema, P. Sakian Dezfuli, E.J.G. Janssen, R. Mahmoudi, A.H.M. Roermund, van

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)
126 Downloads (Pure)

Abstract

This paper presents two monolithic transformer structures exhibiting high self resonance frequencies(fSR). Effect of positive and negative coupling factor on self resonance frequency is investigated. The transformer turn ratio and structure is selected to improve design and ease layout of a high frequency LNA and VCO. Measurement results of a transformer show good agreement with simulated values and demonstrate a coupling factor of 0.7 at 20 GHz.
Original languageEnglish
Title of host publicationIEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2009 : SiRF '09 ; San Diego, CA, USA, 19 - 21 Jan. 2009
EditorsWilliam J. Chappell
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1-4
ISBN (Print)978-1-4244-3940-9
DOIs
Publication statusPublished - 2009

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    Cheema, H. M., Sakian Dezfuli, P., Janssen, E. J. G., Mahmoudi, R., & Roermund, van, A. H. M. (2009). Monolithic transformers for high frequency bulk CMOS circuits. In W. J. Chappell (Ed.), IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2009 : SiRF '09 ; San Diego, CA, USA, 19 - 21 Jan. 2009 (pp. 1-4). Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SMIC.2009.4770512