Monolithic photonic integration technology platform and devices at wavelengths beyond 2 μm for gas spectroscopy applications

S. Latkowski, P.J. van Veldhoven, A. Hänsel, D. D'Agostino, H. Rabbani-Haghighi, B. Docter, N. Bhattacharya, P.J.A. Thijs, H.P.M.M. Ambrosius, M.K. Smit, K.A. Williams, E.A.J.M. Bente

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar, but-joint, active-passive integration on indium phosphide substrate with active components based on strained InGaAs quantum wells. Using this limited set of basic building blocks a novel geometry, widely tunable laser source was designed and fabricated within the first long wavelength multiproject wafer run. The fabricated laser operates around 2027 nm, covers a record tuning range of 31 nm and is successfully employed in absorption measurements of carbon dioxide. These results demonstrate a fully functional long wavelength photonic integrated circuit that operates at these wavelengths. Moreover, the process steps and material system used for the long wavelength technology are almost identical to the ones which are used in the technology process at 1.5μm which makes it straightforward and hassle-free to transfer to the photonic foundries with existing fabrication lines. The changes from the 1550 nm technology and the trade-offs made in the building block design and layer stack will be discussed.

Original languageEnglish
Title of host publicationIntegrated Optics
Subtitle of host publicationDevices, Materials, and Technologies XXI
Place of PublicationBellingham
PublisherSPIE
ISBN (Electronic)9781510606531
DOIs
Publication statusPublished - 1 Jan 2017
EventIntegrated Optics: Devices, Materials, and Technologies XXI - San Francisco, United States
Duration: 30 Jan 20171 Feb 2017

Conference

ConferenceIntegrated Optics: Devices, Materials, and Technologies XXI
CountryUnited States
CitySan Francisco
Period30/01/171/02/17

Fingerprint

Photonic integration technology
gas spectroscopy
Photonics
Spectroscopy
platforms
Gases
photonics
Wavelength
Tunable Laser
Laser tuning
wavelengths
tunable lasers
Building Blocks
Photonic Integrated Circuits
Indium phosphide
foundries
indium phosphides
InGaAs
Block Design
Quantum Well

Keywords

  • Gas spectroscopy
  • Photonic integrated circuits
  • Semiconductor laser
  • Tunable laser

Cite this

Latkowski, S., van Veldhoven, P. J., Hänsel, A., D'Agostino, D., Rabbani-Haghighi, H., Docter, B., ... Bente, E. A. J. M. (2017). Monolithic photonic integration technology platform and devices at wavelengths beyond 2 μm for gas spectroscopy applications. In Integrated Optics: Devices, Materials, and Technologies XXI [101060Q] Bellingham: SPIE. https://doi.org/10.1117/12.2256604
Latkowski, S. ; van Veldhoven, P.J. ; Hänsel, A. ; D'Agostino, D. ; Rabbani-Haghighi, H. ; Docter, B. ; Bhattacharya, N. ; Thijs, P.J.A. ; Ambrosius, H.P.M.M. ; Smit, M.K. ; Williams, K.A. ; Bente, E.A.J.M. / Monolithic photonic integration technology platform and devices at wavelengths beyond 2 μm for gas spectroscopy applications. Integrated Optics: Devices, Materials, and Technologies XXI. Bellingham : SPIE, 2017.
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Latkowski, S, van Veldhoven, PJ, Hänsel, A, D'Agostino, D, Rabbani-Haghighi, H, Docter, B, Bhattacharya, N, Thijs, PJA, Ambrosius, HPMM, Smit, MK, Williams, KA & Bente, EAJM 2017, Monolithic photonic integration technology platform and devices at wavelengths beyond 2 μm for gas spectroscopy applications. in Integrated Optics: Devices, Materials, and Technologies XXI., 101060Q, SPIE, Bellingham, Integrated Optics: Devices, Materials, and Technologies XXI, San Francisco, United States, 30/01/17. https://doi.org/10.1117/12.2256604

Monolithic photonic integration technology platform and devices at wavelengths beyond 2 μm for gas spectroscopy applications. / Latkowski, S.; van Veldhoven, P.J.; Hänsel, A.; D'Agostino, D.; Rabbani-Haghighi, H.; Docter, B.; Bhattacharya, N.; Thijs, P.J.A.; Ambrosius, H.P.M.M.; Smit, M.K.; Williams, K.A.; Bente, E.A.J.M.

Integrated Optics: Devices, Materials, and Technologies XXI. Bellingham : SPIE, 2017. 101060Q.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - Monolithic photonic integration technology platform and devices at wavelengths beyond 2 μm for gas spectroscopy applications

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AU - D'Agostino, D.

AU - Rabbani-Haghighi, H.

AU - Docter, B.

AU - Bhattacharya, N.

AU - Thijs, P.J.A.

AU - Ambrosius, H.P.M.M.

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AU - Williams, K.A.

AU - Bente, E.A.J.M.

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N2 - In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar, but-joint, active-passive integration on indium phosphide substrate with active components based on strained InGaAs quantum wells. Using this limited set of basic building blocks a novel geometry, widely tunable laser source was designed and fabricated within the first long wavelength multiproject wafer run. The fabricated laser operates around 2027 nm, covers a record tuning range of 31 nm and is successfully employed in absorption measurements of carbon dioxide. These results demonstrate a fully functional long wavelength photonic integrated circuit that operates at these wavelengths. Moreover, the process steps and material system used for the long wavelength technology are almost identical to the ones which are used in the technology process at 1.5μm which makes it straightforward and hassle-free to transfer to the photonic foundries with existing fabrication lines. The changes from the 1550 nm technology and the trade-offs made in the building block design and layer stack will be discussed.

AB - In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar, but-joint, active-passive integration on indium phosphide substrate with active components based on strained InGaAs quantum wells. Using this limited set of basic building blocks a novel geometry, widely tunable laser source was designed and fabricated within the first long wavelength multiproject wafer run. The fabricated laser operates around 2027 nm, covers a record tuning range of 31 nm and is successfully employed in absorption measurements of carbon dioxide. These results demonstrate a fully functional long wavelength photonic integrated circuit that operates at these wavelengths. Moreover, the process steps and material system used for the long wavelength technology are almost identical to the ones which are used in the technology process at 1.5μm which makes it straightforward and hassle-free to transfer to the photonic foundries with existing fabrication lines. The changes from the 1550 nm technology and the trade-offs made in the building block design and layer stack will be discussed.

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KW - Semiconductor laser

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M3 - Conference contribution

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BT - Integrated Optics

PB - SPIE

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Latkowski S, van Veldhoven PJ, Hänsel A, D'Agostino D, Rabbani-Haghighi H, Docter B et al. Monolithic photonic integration technology platform and devices at wavelengths beyond 2 μm for gas spectroscopy applications. In Integrated Optics: Devices, Materials, and Technologies XXI. Bellingham: SPIE. 2017. 101060Q https://doi.org/10.1117/12.2256604