Monolithic InP-based passively modelocked semiconductor ring lasers at 1.5 µm

E.A.J.M. Bente, M.J.R. Heck, Y. Barbarin, S. Anantathanasarn, R. Nötzel, M.K. Smit

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

In this paper an overview is given of the results we have obtained at the COBRA Research Institute in our work on passively modelocked semiconductor lasers operating in the 1.5 µm wavelength region. Most results concern modelocked ring lasers that are realized monolithically in the InP/InGaAsP materials system as well as simulations using lumped element and traveling wave type models. The experimental results show that the ring lasers appear as the more stable type of lasers. The modeling results show the importance of using a symmetrical configuration in the ring laser for stable operation. Most recent results on linear modelocked quantum dot lasers at 1.5 µm indicate the improvements possible using these materials
Original languageEnglish
Title of host publicationProceedings of Physics and simulation of optoelectronics devices XVI, San Jose, Calfornia, 21 January 2008
EditorsM. Osinski, F. Henneberger, K. Edamatsu
Place of PublicationBellingham
PublisherSPIE
Pages688915-1/15
DOIs
Publication statusPublished - 2008
EventPhysics and Simulation of Optoelectronic Devices XVI - San Jose, United States
Duration: 21 Jan 200824 Jan 2008

Publication series

NameProceedings of SPIE
Volume6889
ISSN (Print)0277-786X

Conference

ConferencePhysics and Simulation of Optoelectronic Devices XVI
Country/TerritoryUnited States
CitySan Jose
Period21/01/0824/01/08

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