Monolithic AWG-based discretely tunable laser diode with nanosecond switching speed

M.J.R. Heck, Antonio La Porta, X.J.M. Leijtens, L.M. Augustin, T. Vries, de, E. Smalbrugge, Y.S. Oei, R. Nötzel, R. Gaudino, D.J. Robbins, M.K. Smit

Research output: Contribution to journalArticleAcademicpeer-review

40 Citations (Scopus)
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A novel concept for an arrayed-waveguide-grating (AWG)-based fast tunable laser is presented. It is fabricated in the InP-InGaAsP monolithic integration technology. Laser peaks have a sidemode suppression ratio of 30-40 dB. The wavelength switching speed is in the order of a few nanoseconds and switching is achieved by a 1-mA bias current. The switching between AWG channels is discrete and no laser operation takes place at wavelengths corresponding to other channels during the tuning process.
Original languageEnglish
Pages (from-to)905-907
Number of pages14
JournalIEEE Photonics Technology Letters
Issue number13
Publication statusPublished - 2009


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