Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substrates

Q. Gong; R. Nötzel; H.-P. Schönherr; K.H. Ploog

doi:10.1016/S0169-4332(01)00922-9

Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substrates

Q. Gong
, R. Nötzel
, H.-P. Schönherr
, K.H. Ploog

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

Abstract

We report on the morphology and properties of the surface formed by molecular-beam epitaxy on shallow mesa gratings on patterned GaAs(311)A and GaAs(100). On GaAs(311)A substrates, the corrugated surface formed after GaAs growth on shallow mesa gratings along [011] is composed of monolayer high steps and (311)A terraces. These pattern induced steps which are different on opposite slopes play an important role in InAs growth on this novel template leading to distinct lateral modulation of the island distribution. On GaAs(100) substrates, growth on shallow mesa gratings along [011], [010] and [011] is drastically sensitive to the pattern direction due to the difference of steps along [011] and [011]

Original language	English
Pages (from-to)	480-484
Journal	Applied Surface Science
Volume	190
Issue number	1-4
DOIs	https://doi.org/10.1016/S0169-4332(01)00922-9
Publication status	Published - 2002

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title = "Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substrates",

abstract = "We report on the morphology and properties of the surface formed by molecular-beam epitaxy on shallow mesa gratings on patterned GaAs(311)A and GaAs(100). On GaAs(311)A substrates, the corrugated surface formed after GaAs growth on shallow mesa gratings along [011] is composed of monolayer high steps and (311)A terraces. These pattern induced steps which are different on opposite slopes play an important role in InAs growth on this novel template leading to distinct lateral modulation of the island distribution. On GaAs(100) substrates, growth on shallow mesa gratings along [011], [010] and [011] is drastically sensitive to the pattern direction due to the difference of steps along [011] and [011]",

author = "Q. Gong and R. N{\"o}tzel and H.-P. Sch{\"o}nherr and K.H. Ploog",

year = "2002",

doi = "10.1016/S0169-4332(01)00922-9",

language = "English",

volume = "190",

pages = "480--484",

journal = "Applied Surface Science",

issn = "0169-4332",

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T1 - Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substrates

AU - Gong, Q.

AU - Nötzel, R.

AU - Schönherr, H.-P.

AU - Ploog, K.H.

PY - 2002

Y1 - 2002

N2 - We report on the morphology and properties of the surface formed by molecular-beam epitaxy on shallow mesa gratings on patterned GaAs(311)A and GaAs(100). On GaAs(311)A substrates, the corrugated surface formed after GaAs growth on shallow mesa gratings along [011] is composed of monolayer high steps and (311)A terraces. These pattern induced steps which are different on opposite slopes play an important role in InAs growth on this novel template leading to distinct lateral modulation of the island distribution. On GaAs(100) substrates, growth on shallow mesa gratings along [011], [010] and [011] is drastically sensitive to the pattern direction due to the difference of steps along [011] and [011]

AB - We report on the morphology and properties of the surface formed by molecular-beam epitaxy on shallow mesa gratings on patterned GaAs(311)A and GaAs(100). On GaAs(311)A substrates, the corrugated surface formed after GaAs growth on shallow mesa gratings along [011] is composed of monolayer high steps and (311)A terraces. These pattern induced steps which are different on opposite slopes play an important role in InAs growth on this novel template leading to distinct lateral modulation of the island distribution. On GaAs(100) substrates, growth on shallow mesa gratings along [011], [010] and [011] is drastically sensitive to the pattern direction due to the difference of steps along [011] and [011]

U2 - 10.1016/S0169-4332(01)00922-9

DO - 10.1016/S0169-4332(01)00922-9

M3 - Article

SN - 0169-4332

VL - 190

SP - 480

EP - 484

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substrates

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