Modulation doping and delta doping of III-V compound semiconductors

P. Hendriks, E.A.E. Zwaal, J.E.M. Haverkort, J.H. Wolter

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Abstract

The transport properties of the 2D electron gas produced by modulation doping of compound semiconductors are reviewed with attention given to the properties at high electric fields. Experimental studies are discussed in which the transport properties lead to insights into current instabilities and switching effects. The concept of electric-field-induced parallel conduction is set forth and shown to explain the current instabilities and current collapse at high electric fields. Delta doping is shown to be effective for electrooptic devices such as modulators. MQW modulators with delta-doped contacts can be used as waveguides in complicated coupler networks, or they can be optimized for a high on/off ratio by increasing device length without increasing propagation loss.
Original languageEnglish
Title of host publicationPhysical concepts of materials for novel optoelectronic device applications II: device physics and applications, Aachen, Federal republic of Germany
EditorsM. Razeghi
Place of PublicationBellingham
PublisherSPIE
Pages217-227
DOIs
Publication statusPublished - 1991
Eventconference; Physical concepts of materials for novel optoelectronic device applications II: device physics and applications -
Duration: 1 Jan 1991 → …

Publication series

NameProceedings of SPIE
Volume1362
ISSN (Print)0277-786X

Conference

Conferenceconference; Physical concepts of materials for novel optoelectronic device applications II: device physics and applications
Period1/01/91 → …
OtherPhysical concepts of materials for novel optoelectronic device applications II: device physics and applications

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