Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region

E.A.J.M. Bente; M.S. Tahvili; B.W. Tilma; J. Kotani; M.K. Smit; R. Nötzel

doi:10.1109/ICTON.2010.5549095

Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region

E.A.J.M. Bente
, M.S. Tahvili
, B.W. Tilma
, J. Kotani
, M.K. Smit
, R. Nötzel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

4 Downloads (Pure)

Abstract

In this paper we report on monolithic laser devices that use InAs/InP (100) quantum dot gain material for optical amplifiers. The gain material has specific properties that can be exploited. It can provide a wide gain bandwidth around a wavelength that can be tuned with current density. In passive and hybrid modelocked lasers characteristic laser dynamics are observed. Such lasers can produced extremely chirped output as well as synchronised pulsed output on multiple wavelengths. Examples of such devices are presented and possible applications in pulsed and tunable lasers are discussed.

Original language	English
Title of host publication	2010 12th International Conference on Transparent Optical Networks, ICTON 2010
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
ISBN (Print)	978-1-4244-7797-5
DOIs	https://doi.org/10.1109/ICTON.2010.5549095
Publication status	Published - 6 Oct 2010
Event	12th International Conference on Transparent Optical Networks (ICTON 2010) - Munich, Germany Duration: 27 Jun 2010 → 1 Jul 2010 Conference number: 12 http://www.nit.eu/icton2010

Conference

Conference	12th International Conference on Transparent Optical Networks (ICTON 2010)
Abbreviated title	ICTON 2010
Country/Territory	Germany
City	Munich
Period	27/06/10 → 1/07/10
Internet address	http://www.nit.eu/icton2010

Keywords

III-V semiconductors
Modelocking
Optical gain measurement
Quantum dot laser

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10.1109/ICTON.2010.5549095

Cite this

Bente, E. A. J. M., Tahvili, M. S., Tilma, B. W., Kotani, J., Smit, M. K., & Nötzel, R. (2010). Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region. In 2010 12th International Conference on Transparent Optical Networks, ICTON 2010 Article 5549095 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICTON.2010.5549095

@inproceedings{d0703c9a2b45479daac3c22e5716596a,

title = "Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region",

abstract = "In this paper we report on monolithic laser devices that use InAs/InP (100) quantum dot gain material for optical amplifiers. The gain material has specific properties that can be exploited. It can provide a wide gain bandwidth around a wavelength that can be tuned with current density. In passive and hybrid modelocked lasers characteristic laser dynamics are observed. Such lasers can produced extremely chirped output as well as synchronised pulsed output on multiple wavelengths. Examples of such devices are presented and possible applications in pulsed and tunable lasers are discussed.",

keywords = "III-V semiconductors, Modelocking, Optical gain measurement, Quantum dot laser",

author = "E.A.J.M. Bente and M.S. Tahvili and B.W. Tilma and J. Kotani and M.K. Smit and R. N{\"o}tzel",

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doi = "10.1109/ICTON.2010.5549095",

language = "English",

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booktitle = "2010 12th International Conference on Transparent Optical Networks, ICTON 2010",

publisher = "Institute of Electrical and Electronics Engineers",

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note = "12th International Conference on Transparent Optical Networks (ICTON 2010), ICTON 2010 ; Conference date: 27-06-2010 Through 01-07-2010",

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Bente, EAJM, Tahvili, MS, Tilma, BW, Kotani, J, Smit, MK & Nötzel, R 2010, Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region. in 2010 12th International Conference on Transparent Optical Networks, ICTON 2010., 5549095, Institute of Electrical and Electronics Engineers, Piscataway, 12th International Conference on Transparent Optical Networks (ICTON 2010), Munich, Germany, 27/06/10. https://doi.org/10.1109/ICTON.2010.5549095

Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region. / Bente, E.A.J.M.; Tahvili, M.S.; Tilma, B.W. et al.
2010 12th International Conference on Transparent Optical Networks, ICTON 2010. Piscataway: Institute of Electrical and Electronics Engineers, 2010. 5549095.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region

AU - Bente, E.A.J.M.

AU - Tahvili, M.S.

AU - Tilma, B.W.

AU - Kotani, J.

AU - Smit, M.K.

AU - Nötzel, R.

N1 - Conference code: 12

PY - 2010/10/6

Y1 - 2010/10/6

N2 - In this paper we report on monolithic laser devices that use InAs/InP (100) quantum dot gain material for optical amplifiers. The gain material has specific properties that can be exploited. It can provide a wide gain bandwidth around a wavelength that can be tuned with current density. In passive and hybrid modelocked lasers characteristic laser dynamics are observed. Such lasers can produced extremely chirped output as well as synchronised pulsed output on multiple wavelengths. Examples of such devices are presented and possible applications in pulsed and tunable lasers are discussed.

AB - In this paper we report on monolithic laser devices that use InAs/InP (100) quantum dot gain material for optical amplifiers. The gain material has specific properties that can be exploited. It can provide a wide gain bandwidth around a wavelength that can be tuned with current density. In passive and hybrid modelocked lasers characteristic laser dynamics are observed. Such lasers can produced extremely chirped output as well as synchronised pulsed output on multiple wavelengths. Examples of such devices are presented and possible applications in pulsed and tunable lasers are discussed.

KW - III-V semiconductors

KW - Modelocking

KW - Optical gain measurement

KW - Quantum dot laser

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U2 - 10.1109/ICTON.2010.5549095

DO - 10.1109/ICTON.2010.5549095

M3 - Conference contribution

SN - 978-1-4244-7797-5

BT - 2010 12th International Conference on Transparent Optical Networks, ICTON 2010

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 12th International Conference on Transparent Optical Networks (ICTON 2010)

Y2 - 27 June 2010 through 1 July 2010

ER -

Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region

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